Light-emitting element

• US 8,980,658 B2
• Filed: 01/31/2013
• Issued: 03/17/2015
• Est. Priority Date: 02/18/2008
• Status: Active Grant

• Current Assignee: Hiroshima University
• Original Assignee: Hiroshima University
• Inventors: Yokoyama, Shin
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US13/755,846
• Publication Number:
  US 20130143344A1
• Time in Patent Office: 775 Days
• Field of Search: 438/22, 438/45, 438/962, 257/E29.069, 257/E31.033
• US Class Current: 438/22
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/127 Quantum box structures
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/26 Materials of the light emitting region

Abstract

A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Claims

1. A method for manufacturing a light-emitting element, comprising:

depositing a first insulator including quantum dots on a principal surface of a semiconductor substrate;

depositing a second insulator including quantum dots on the first insulator;

introducing a first impurity of a first conduction type into the first insulator;

introducing a second impurity of a second conduction type into the second insulator, wherein the second conduction type is different from the first conduction type; and

heat-treating the first insulator including the first impurity and the second insulator including the second impurity.

2. The method of claim 1, wherein the first insulator is composed of a silicon oxide film.

3. The method of claim 2, wherein the second insulator is composed of a silicon nitride film.

4. The method of claim 1, wherein said depositing the first insulator on the principal surface comprises adjusting a first flow rate ratio of a first material gas relative to a second material gas such that the first flow rate ratio is greater than or equal to a first standard flow rate ratio.

5. The method of claim 4, wherein the first material gas includes silicon and the second material gas includes oxygen.

6. The method of claim 4, wherein said depositing the second insulator on the first insulator comprises adjusting a second flow rate ratio of the first material gas relative to a third material gas such that the second flow rate ratio is greater than or equal to a second standard flow rate ratio.

7. The method of claim 6, wherein the third material gas includes nitrogen.

8. The method of claim 1, wherein the first impurity comprises an n-type impurity and the second impurity comprises a p-type impurity.

9. The method of claim 1, wherein said heat-treating the first insulator and the second insulator includes heat-treating the first insulator and the second insulator in a nitrogen atmosphere.

10. A method for manufacturing a light-emitting element, comprising:

depositing a first insulator on a principal surface of a semiconductor substrate;

depositing a second insulator on the first insulator;

depositing a third insulator on the second insulator, wherein the third insulator has a larger barrier energy against electrons than the second insulator,

wherein the first insulator, the second insulator, and the third insulator each include quantum dots;

introducing a first impurity of a first conduction type into the first insulator;

introducing a second impurity of a second conduction type into the second and third insulators, wherein the second conduction type is different from the first conduction type; and

heat-treating the first insulator including the first impurity, the second insulator including the second impurity and the third insulator including the second impurity.

11. The method of claim 10, wherein the first impurity comprises an n-type impurity and the second impurity comprises a p-type impurity.

12. The method of claim 10, wherein said heat-treating the first insulator, the second insulator, and the third insulator includes heat-treating the first insulator, the second insulator, and the third insulator in a nitrogen atmosphere.

13. The method of claim 10, wherein said depositing the first insulator on the principal surface comprises adjusting a flow rate ratio of a first material gas relative to a second material gas such that the flow rate ratio is greater than or equal to a standard flow rate ratio.

14. The method of claim 13, wherein the first material gas includes silicon and the second material gas includes oxygen.

15. A method for manufacturing a light-emitting element, comprising:

depositing a first insulator including first quantum dots on a principal surface of a semiconductor substrate, wherein the first quantum dots are of a first conduction type; and

depositing a second insulator including second quantum dots on the first insulator, wherein the second quantum dots are of a second conduction type, and wherein the second conduction type is different than the first conduction type.

16. The method of claim 15, wherein the first insulator is composed of a silicon oxide film and the second insulator is composed of a silicon nitride film.

17. The method of claim 15, further comprising heat-treating the first insulator and the second insulator.

18. The method of claim 17, wherein said heat-treating the first insulator and the second insulator includes heat-treating the first insulator and the second insulator in a nitrogen atmosphere.

19. The method of claim 15, wherein said depositing the first insulator on the principal surface comprises adjusting a flow rate ratio of a first material gas relative to a second material gas such that the flow rate ratio is greater than or equal to a standard flow rate ratio.