Integrated getter area for wafer level encapsulated microelectromechanical systems
First Claim
1. A method of manufacturing a microelectromechanical device including a mechanical structure and a periphery area which are disposed over a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:
- forming the mechanical structure;
depositing a fluid in the chamber;
forming a getter area in the periphery area by forming a plurality of gaps in the periphery area, wherein the plurality of gaps are disposed in the chamber; and
sealing the chamber by depositing the thin film encapsulation structure;
wherein;
at least a portion of the respective mechanical structure, periphery area and getter area are disposed in a same cavity of the chamber; and
the getter area captures impurities, atoms, or molecules that are out-gassed from materials contained within the chamber.
0 Assignments
0 Petitions
Accused Products
Abstract
There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area and/or an increased chamber volume, which causes little to no increase in overall dimension(s) from the perspective of the mechanical structure and chamber. The integrated getter area is disposed within the chamber and is capable of (i) “capturing” impurities, atoms and/or molecules that are out-gassed from surrounding materials and/or (ii) reducing and/or minimizing the adverse impact of such impurities, atoms and/or molecules (for example, reducing the probability of adding mass to a resonator which would thereby change the resonator'"'"'s frequency). In this way, the thin film wafer level packaged MEMS of the present invention includes a relatively stable, controlled pressure environment within the chamber to provide, for example, a more stable predetermined, desired and/or selected mechanical damping of the mechanical structure.
-
Citations
17 Claims
-
1. A method of manufacturing a microelectromechanical device including a mechanical structure and a periphery area which are disposed over a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:
-
forming the mechanical structure; depositing a fluid in the chamber; forming a getter area in the periphery area by forming a plurality of gaps in the periphery area, wherein the plurality of gaps are disposed in the chamber; and sealing the chamber by depositing the thin film encapsulation structure; wherein; at least a portion of the respective mechanical structure, periphery area and getter area are disposed in a same cavity of the chamber; and the getter area captures impurities, atoms, or molecules that are out-gassed from materials contained within the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 17)
-
-
8. A microelectromechanical device comprising:
-
a substrate; a mechanical structure disposed over the substrate; a periphery area disposed over the substrate; a getter area including a plurality of gaps disposed in a portion of the periphery area; and a chamber formed, at least in part, by depositing a thin film encapsulation structure over the mechanical structure, the periphery area, and the getter area; wherein; at least a portion of the respective mechanical structure, periphery area and getter area are disposed in a same cavity of the chamber; and the getter area captures impurities, atoms, or molecules that are out-gassed from materials contained within the chamber. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
-
Specification