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Integrated getter area for wafer level encapsulated microelectromechanical systems

  • US 8,980,668 B2
  • Filed: 02/08/2013
  • Issued: 03/17/2015
  • Est. Priority Date: 02/12/2004
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a microelectromechanical device including a mechanical structure and a periphery area which are disposed over a substrate and in a chamber which is formed, at least in part, by a thin film encapsulation structure, the method comprising:

  • forming the mechanical structure;

    depositing a fluid in the chamber;

    forming a getter area in the periphery area by forming a plurality of gaps in the periphery area, wherein the plurality of gaps are disposed in the chamber; and

    sealing the chamber by depositing the thin film encapsulation structure;

    wherein;

    at least a portion of the respective mechanical structure, periphery area and getter area are disposed in a same cavity of the chamber; and

    the getter area captures impurities, atoms, or molecules that are out-gassed from materials contained within the chamber.

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