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Resistive memory device and method of fabricating the same

  • US 8,980,721 B2
  • Filed: 11/30/2012
  • Issued: 03/17/2015
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a resistive memory device, comprising:

  • forming first conductive lines over a substrate such that the first conductive lines are parallel to each other and extend in a first direction;

    forming a first data storage layer on the first conductive lines;

    forming second conductive lines on the first data storage layer such that the second conductive lines are parallel to each other and extend in a second direction across the first direction;

    simultaneously with the forming of the second conductive lines, forming a first oxide layer between the second conductive lines and the first data storage layer by reacting the first data storage layer with the second conductive lines;

    forming a second data storage layer on the second conductive lines; and

    forming third conductive lines on the second data storage layer such that the third conductive lines are parallel to each other and extend in the first direction,simultaneously with the forming of the third conductive lines, forming a second oxide layer between the third conductive lines and the second data storage layer by reacting the second data storage layer with the third conductive lines;

    wherein the third conductive line does not overlap the first conductive line in the vertical direction.

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