Semiconductor device

• US 8,981,374 B2
• Filed: 01/23/2014
• Issued: 03/17/2015
• Est. Priority Date: 01/30/2013
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hatsumi, Ryo, Jintyou, Masami, Kubota, Daisuke, Shigenobu, Takumi, Goto, Naoto
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US14/161,975
• Publication Number:
  US 20140209897A1
• Time in Patent Office: 418 Days
• Field of Search: None
• US Class Current: 257/43
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13415 Drop filling process
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G06F 2203/04108 Touchless 2D- digitiser, i.e. digitiser detecting the X/Y position of the input means, finger or stylus, also when it does not touch, but is proximate to the digitiser's interaction surface without distance measurement in the Z direction
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/0446 using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 : with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/60 : Electrodes
• CPC Class Codes: H01L 29/24 : including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/41733 : for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 : Ohmic electrodes
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Claims

1. A semiconductor device comprising:

a transistor over a substrate;

a first light-transmitting conductive film over the substrate;

an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film;

a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening;

a second light-transmitting conductive film electrically connected to the transistor and having a depressed portion over the opening; and

an organic resin film over the second light-transmitting conductive film to fill the depressed portion.

2. The semiconductor device according to claim 1,

the transistor comprising:

a gate electrode over the substrate;

a gate insulating film in contact with the gate electrode;

an oxide semiconductor film in contact with the gate insulating film; and

a pair of conductive films in contact with the oxide semiconductor film,

wherein the first light-transmitting conductive film is in contact with the gate insulating film.

3. The semiconductor device according to claim 2, wherein the oxide semiconductor film is formed at the same time as the first light-transmitting conductive film.

4. The semiconductor device according to claim 2, wherein each of the first light-transmitting conductive film and the oxide semiconductor film comprises at least one of In, Ga and Zn.

5. The semiconductor device according to claim 2, wherein the nitride insulating film is in contact with the gate insulating film.

6. A semiconductor device comprising:

a transistor over a substrate;

a first light-transmitting conductive film over the substrate;

an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film;

a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening; and

a second light-transmitting conductive film electrically connected to the transistor and having a depressed portion over the opening,

wherein in the oxide insulating film having the opening, an angle between a surface of the first light-transmitting conductive film and a side surface of the oxide insulating film is greater than or equal to 5° and

less than or equal to 45°

.

7. The semiconductor device according to claim 6, further comprising an organic resin film over the second light-transmitting conductive film to fill the depressed portion.

8. The semiconductor device according to claim 6,

the transistor comprising:

a gate electrode over the substrate;

a gate insulating film in contact with the gate electrode;

an oxide semiconductor film in contact with the gate insulating film; and

a pair of conductive films in contact with the oxide semiconductor film,

wherein the first light-transmitting conductive film is in contact with the gate insulating film.

9. The semiconductor device according to claim 8, wherein the oxide semiconductor film is formed at the same time as the first light-transmitting conductive film.

10. The semiconductor device according to claim 8, wherein each of the first light-transmitting conductive film and the oxide semiconductor film comprises at least one of In, Ga and Zn.

11. A semiconductor device comprising:

a transistor over a substrate, the transistor comprising a semiconductor film;

a pixel portion over the substrate;

a first light-transmitting conductive film over the substrate in the pixel portion;

a first insulating film over the semiconductor film and the first light-transmitting conductive film, the first insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;

a second insulating film over the first insulating film, the second insulating film in contact with the first light-transmitting conductive film in the opening;

a second light-transmitting conductive film over the second insulating film in the opening, the second light-transmitting conductive film electrically connected to the transistor; and

a planarization film over the second light-transmitting conductive film, wherein the planarization film and the opening overlap each other,

wherein an energy gap of the semiconductor film is 2.5 eV or more, and

wherein the second insulating film comprises hydrogen.

12. The semiconductor device according to claim 11, wherein the planarization film overlaps the transistor.

13. The semiconductor device according to claim 11,

wherein the transistor comprises a first electrode, a second electrode and a third insulating film over the semiconductor film,

wherein the third insulating film is interposed between the first electrode and the second electrode, and

wherein the second insulating film overlaps the third insulating film.

14. The semiconductor device according to claim 11,

wherein the semiconductor film comprises a first semiconductor film and a second semiconductor film,

wherein the second semiconductor film is formed over and in contact with the first semiconductor film, and

wherein each of the first semiconductor film and the second semiconductor film comprises a first metal element.

15. The semiconductor device according to claim 14,

wherein the transistor comprises a first electrode and a second electrode,

wherein the first semiconductor film is interposed between the first electrode and the second electrode, and

wherein the second semiconductor film is formed over the first electrode and the second electrode.

16. An electronic appliance comprising the semiconductor device according to claim 11.

17. The semiconductor device according to claim 11, wherein each of the semiconductor film and the first light-transmitting conductive film comprises In, Zn and O.

18. The semiconductor device according to claim 11, wherein the first insulating film is capable of releasing oxygen.

19. A semiconductor device comprising:

a transistor over a substrate, the transistor comprising a semiconductor film;

a pixel portion over the substrate;

a first light-transmitting conductive film over the substrate in the pixel portion;

a first insulating film over the semiconductor film and the first light-transmitting conductive film, the first insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;

a second insulating film over the first insulating film and in contact with the first light-transmitting conductive film; and

a second light-transmitting conductive film over the second insulating film over the opening, the second light-transmitting conductive film electrically connected to the transistor,

wherein in the opening, an angle between a surface of the first light-transmitting conductive film and a side surface of the first insulating film is greater than or equal to 5° and

less than or equal to 45°

,

wherein an energy gap of the semiconductor film is 2.5 eV or more, and

wherein the second insulating film comprises hydrogen.

20. The semiconductor device according to claim 19,

wherein the semiconductor film comprises a first semiconductor film and a second semiconductor film,

wherein the second semiconductor film is formed over and in contact with the first semiconductor film, and

wherein each of the first semiconductor film and the second semiconductor film comprises a first metal element.

21. The semiconductor device according to claim 20,

wherein the transistor comprises a first electrode and a second electrode,

wherein the first semiconductor film is interposed between the first electrode and the second electrode, and

wherein the second semiconductor film is formed over the first electrode and the second electrode.

22. An electronic appliance comprising the semiconductor device according to claim 19.

23. The semiconductor device according to claim 19, wherein each of the semiconductor film and the first light-transmitting conductive film comprises In, Zn and O.

24. The semiconductor device according to claim 19, wherein the first insulating film is capable of releasing oxygen.