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Semiconductor device

  • US 8,981,374 B2
  • Filed: 01/23/2014
  • Issued: 03/17/2015
  • Est. Priority Date: 01/30/2013
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a transistor over a substrate;

    a first light-transmitting conductive film over the substrate;

    an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film;

    a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening;

    a second light-transmitting conductive film electrically connected to the transistor and having a depressed portion over the opening; and

    an organic resin film over the second light-transmitting conductive film to fill the depressed portion.

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