Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
DCFirst Claim
1. A Light Emitting Diode (LED) device comprising:
- a substrate;
an active layer formed above the substrate; and
a reflector structure disposed below the substrate, the reflector structure comprising;
a low-index total internal reflection layer (TIR); and
a Distributed Bragg Reflector (DBR) disposed below the substrate,wherein the DBR comprises a first plurality of periods and a second plurality of periods, wherein each of the first plurality of periods includes a first layer of a high index dielectric material with a first thickness and a second layer of a low index dielectric material with a second thickness, and wherein each of the second plurality of periods includes a first layer of the high index dielectric material with a third thickness and a second layer of the low index dielectric material with a fourth thickness, andwherein the TIR is disposed between the substrate and the DBR.
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Abstract
A blue LED device has a transparent substrate and a reflector structure disposed on the backside of the substrate. The reflector structure includes a Distributed Bragg Reflector (DBR) structure having layers configured to reflect yellow light as well as blue light. In one example, the DBR structure includes a first portion where the thicknesses of the layers are larger, and also includes a second portion where the thicknesses of the layers are smaller. In addition to having a reflectance of more than 97.5 percent for light of a wavelength in a 440 nm-470 nm range, the overall reflector structure has a reflectance of more than 90 percent for light of a wavelength in a 500 nm-700 nm range.
63 Citations
27 Claims
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1. A Light Emitting Diode (LED) device comprising:
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a substrate; an active layer formed above the substrate; and a reflector structure disposed below the substrate, the reflector structure comprising; a low-index total internal reflection layer (TIR); and a Distributed Bragg Reflector (DBR) disposed below the substrate, wherein the DBR comprises a first plurality of periods and a second plurality of periods, wherein each of the first plurality of periods includes a first layer of a high index dielectric material with a first thickness and a second layer of a low index dielectric material with a second thickness, and wherein each of the second plurality of periods includes a first layer of the high index dielectric material with a third thickness and a second layer of the low index dielectric material with a fourth thickness, and wherein the TIR is disposed between the substrate and the DBR. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A Light Emitting Diode (LED) device comprising:
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a substrate; an active layer formed on the substrate and configured to emit second light of a wavelength less than 500 nm, wherein the active layer comprises indium and gallium; and a reflector structure formed on an opposite side of the substrate from the active layer, the reflector structure comprising a low-index total internal reflection (TIR) layer and a Distributed Bragg Reflector (DBR), wherein the reflector structure has a first reflectance greater than 90 percent for first light having a wavelength in a range of 500 nm to 700 nm and passing from the substrate to the reflector structure and a second reflectance greater than 90 percent for the second light, and the TIR is disposed between the substrate and the DBR. - View Dependent Claims (27)
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Specification