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Source/drain contacts for non-planar transistors

  • US 8,981,435 B2
  • Filed: 10/01/2011
  • Issued: 03/17/2015
  • Est. Priority Date: 10/01/2011
  • Status: Active Grant
First Claim
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1. A microelectronic device, comprising:

  • a non-planar transistor gate over a non-planar transistor fin, wherein the non-planar transistor gate comprises a gate electrode recessed between gate spacers and a capping structure disposed on the recessed gate electrode between the gate spacers,a silicon-containing source/drain region;

    at least one dielectric material layer over the source/drain region, the non-planar transistor gate spacers, and the capping structure;

    a source/drain contact extending through a portion of the at least one dielectric material layer and comprising a conductive contact material and a titanium-containing contact interface layer disposed between conductive contact material and the silicon-containing source/drain region; and

    a titanium silicide interface disposed between the silicon-containing source/drain region and the titanium-containing contact interface layer.

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