Method of forming a semiconductor power switching device, structure therefor, and power converter

• US 8,981,748 B2
• Filed: 08/08/2011
• Issued: 03/17/2015
• Est. Priority Date: 08/08/2011
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Guitart, Jaume Roig, Bauwens, Filip
• Primary Examiner(s): Zhang, Jue
• Assistant Examiner(s): Jackson, Lakaisha
• Application Number:
  US13/205,282
• Publication Number:
  US 20130038304A1
• Time in Patent Office: 1,317 Days
• Field of Search: 323/222, 323/282, 327/107, 327/427, 327/434
• US Class Current: 323/282
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H03K 17/06 Modifications for ensuring a fully conducting state
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

At least one exemplary embodiment is directed to a semiconductor power switching device including a ctrl switch, a sync switch, where a resistor is electrically connected between the ctrl switch and the sync switch.

Claims

1. A semiconductor power switching device comprising:

a ctrl switch, where the ctrl switch is a shield gate transistor;

a sync switch, where the sync switch is a transistor;

an inductor; and

a resistor coupled in series with the inductor, where the series coupled inductor and resistor couple a first plate on the ctrl switch with a source of the sync switch.

2. The switching device according to claim 1, where the sync switch is a second shield gate transistor.

3. The switching device according to claim 2, where the resistor is at least one of an external resistor, an intrinsic distributed shield plate resistance, an existing shield plate meander resistor, a trench resistor, poly resistor, or a metal resistor.

4. The switching device according to claim 3, where the resistor is greater than 100 ohms.

5. The switching device according to claim 4, where the resistor has a value between about 100 ohms and about 1000 ohms.

6. The switching device according to claim 5, where the first plate on the ctrl switch is a ctrl shield plate.

7. The switching device according to claim 6, where the ctrl switch is a MOSFET.

8. The switching device according to claim 6, where the first plate on the ctrl switch is coupled to a second plate on the sync switch.

9. The switching device according to claim 8 where the second plate is a sync shield plate in the sync switch.

10. The switching device according to claim 9, where the sync switch is a MOSFET.

11. The switching device according to claim 1, where the resistor is at least one of an external resistor, an intrinsic distributed shield plate resistance, an existing shield plate meander resistor, a trench resistor, poly resistor, a diffused resistor, or a metal resistor.

12. The switching device according to claim 11, where the resistor is greater than 100 ohms.

13. The switching device according to claim 12 where the resistor has a value between about 100 ohms and about 1000 ohms.

14. The switching device according to claim 13, where the first plate on the ctrl switch is a ctrl shield plate.

15. The switching device according to claim 14, where the ctrl switch is a MOSFET.

16. The switching device according to claim 14, where the first plate on the ctrl switch is coupled to a second plate on the sync switch.

17. The switching device according to claim 16 where the second plate is a sync shield plate in the sync switch.

18. The switching device according to claim 17, where the sync switch is a MOSFET.

19. The switching device according to claim 1, where the inductor has a value between about 0.01 nH and about 500 nH.

20. A method of forming a power switching device comprising:

configuring a voltage control device with a ctrl switch and a sync switch including a source, where the ctrl switch has a ctrl shield plate; and

coupling a resistor between the ctrl shield plate and a source of the sync switch wherein the switching device is devoid of a second resistor coupling the ctrl shield plate to a drain of the ctrl switch.

21. The method according to claim 20 where the ctrl switch is a shield gate transistor.

22. The method according to claim 20, further comprising:

coupling a ctrl shield plate of the ctrl switch to the source.

23. The method according to claim 22, where the sync switch is a shield gate transistor.

24. The method according to claim 23, where the sync switch has a sync shield plate, where ctrl shield plate is coupled to the sync shield plate.

25. A power converter comprising:

a ctrl switch, where the ctrl switch is a MOSFET, where the ctrl switch includes a ctrl shield plate;

a sync switch, where the sync switch is a MOSFET, where the sync switch includes a sync shield plate; and

a resistor, where the resistor is coupled between the ctrl shield plate and the sync shield plate, where the ctrl shield plate is coupled to a sync switch source, and where the resistor has a value between about 0.1 mohms and about 100 kohms wherein the ctrl switch is devoid of a second resistor coupling the ctrl shield plate to a drain of the ctrl switch.