Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system

• US 8,983,399 B2
• Filed: 12/08/2009
• Issued: 03/17/2015
• Est. Priority Date: 01/07/2009
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kawamura, Hirofumi, Okada, Yasuhiro
• Primary Examiner(s): Tran, Tuan A
• Application Number:
  US13/141,726
• Publication Number:
  US 20110309893A1
• Time in Patent Office: 1,925 Days
• Field of Search: 455/41.1, 455/41.2, 455/73, 455/575.1, 455/575.5, 361/760, 361/762, 361/765, 361/784, 361/790, 361/814, 361/816, 361/818, 257/685, 257/686, 257/777, 257/778, 257/779, 257/780
• US Class Current: 455/73
• CPC Class Codes: H01L 2223/6627 Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06575 Auxiliary carrier between devices, the carrier having no electrical connection structure
• CPC Class Codes: H01L 2225/1005 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2225/1023 the support being an insulating substrate
• CPC Class Codes: H01L 2225/1058 Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15331 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1903 : including wave guides
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01P 3/121 : integrated in a substrate
• CPC Class Codes: H01P 3/122 : Dielectric loaded (not air)
• CPC Class Codes: H01Q 21/00 : Antenna arrays or systems arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system H01Q3/00
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/0407 : Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40

Abstract

Provided is an in-millimeter-wave dielectric transmission device. The in-millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of in-millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween.

Claims

1. A semiconductor device comprising:

a semiconductor chip provided on a substrate and capable of millimeter-wave band communication;

an antenna structure connected to the semiconductor chip;

an insulating member configured to cover the semiconductor chip; and

a millimeter wave transmission member made of a dielectric material including a dielectric capable of millimeter wave signal transmission and matched with the antenna structure.

2. The semiconductor device according to claim 1, wherein the millimeter wave transmission member includes:

an area-defining member with a through portion matched with the antenna structure connected to the semiconductor chip; and

the dielectric material provided in the through portion of the area-defining member.

3. The semiconductor device according to claim 2, wherein the antenna structure connected to the semiconductor chip is provided on the semiconductor chip.

4. The semiconductor device according to claim 3, wherein the antenna structure connected to the semiconductor chip is provided with a patch antenna.

5. The semiconductor device according to claim 4, wherein the semiconductor chip includes:

a first signal generation unit configured to perform signal processing for an input signal and generate a millimeter wave signal;

a bidirectional signal coupling unit configured to couple the semiconductor chip to the antenna structure, transmit the millimeter wave signal generated by the first signal generation unit to the millimeter wave transmission member, and receive the millimeter wave signal from the millimeter wave transmission member;

a second signal generation unit configured to perform signal processing for the millimeter wave signal received by the signal coupling unit and generate an output signal.

6. The semiconductor device according to claim 5, wherein the first signal generation unit includes a first signal conversion section configured to convert a parallel input signal to a serial output signal, and

the second signal generation unit includes a second signal conversion section configured to convert a serial input signal to a parallel output signal.

7. The semiconductor device according to claim 2, wherein the antenna structure is arranged in parallel to the semiconductor chip.

8. A method of manufacturing a semiconductor device, the method comprising the steps of:

forming a semiconductor chip capable of millimeter-wave band communication on a substrate;

connecting an antenna structure to the semiconductor chip formed on the substrate;

insulating the semiconductor chip by covering the semiconductor chip with an insulating member; and

matching the antenna structure with a millimeter wave transmission member using a dielectric material including a dielectric capable of millimeter wave signal transmission.

9. The method according to claim 8, wherein the step of matching the antenna structure with the millimeter wave transmission member includes the steps of:

forming an area-defining member in the insulating member;

forming a through portion, which is matched with the antenna structure, in the area-defining member; and

forming the millimeter wave transmission member by providing the dielectric material in the through portion of the area-defining member.