Computer system and management system

• US 8,984,211 B2
• Filed: 12/21/2011
• Issued: 03/17/2015
• Est. Priority Date: 12/21/2011
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Shibayama, Tsukasa, Suzuki, Akifumi, Maki, Nobuhiro, Ogawa, Junji, Asano, Masayasu
• Primary Examiner(s): SONG, HUA JASMINE
• Application Number:
  US13/519,462
• Publication Number:
  US 20140304451A1
• Time in Patent Office: 1,182 Days
• Field of Search: 711/103, 365/185.33
• US Class Current: 711/103
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/7207 management of metadata or control data
• CPC Class Codes: G06F 3/0604 Improving or facilitating administration, e.g. storage management
• CPC Class Codes: G06F 3/0625 Power saving in storage systems
• CPC Class Codes: G06F 3/0644 Management of space entities, e.g. partitions, extents, pools
• CPC Class Codes: G06F 3/0688 Non-volatile semiconductor memory arrays
• CPC Class Codes: G06F 3/0689 Disk arrays, e.g. RAID, JBOD
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 29/82 for EEPROMs
• CPC Class Codes: Y02D 10/00 Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

A storage system, which comprises multiple memory cells and a storage controller, wherein the storage controller manages cell mode information, which either directly or indirectly denotes the number of bits to be stored in multiple memory cells. The cell mode information can be changed in accordance with a request from a management system.

Claims

1. A computer system, comprising:

a storage system, which comprises a storage controller and one or more nonvolatile memory devices; and

a management system coupled to the storage system,

wherein the nonvolatile memory devices each comprise multiple memory cells, each memory cell having semiconductor characteristics enabling the storage of N-bits worth of data, and

wherein the storage controller;

stores storage configuration information indicating either a capacity or an address space of the nonvolatile memory device;

stores cell mode information indicating a cell mode for stipulating the number of bits to be stored in the memory cells;

receives a cell mode change request from the management system; and

either increases or decreases an amount of data to be stored in the nonvolatile memory device subsequent to the request, by changing the cell mode information in accordance with the request and changing either the capacity or the address space of the storage configuration information

wherein the memory cell is a flash memory cell for which a characteristic relating to data stored in the memory cell changes when the number of bits to be stored changes,

wherein data storage in the memory cell is carried out by using cell programming to change a threshold voltage, which is a voltage applied to a control gate when a prescribed amount of electrical current begins to flow between a source gate and a drain gate,

wherein in a first cell mode, a range between a minimum value and a maximum value of the threshold voltage is divided into sub-ranges of 2N and all the divided ranges are used to store N-bits worth of data in one memory cell, and

wherein in a second cell mode, a first divided range including the minimum value and a second divided range not including the maximum value are used to store one-bit worth of data in one memory cell.

2. A computer system according to claim 1, wherein, in a case where a cell mode is switched from the first cell mode to a second cell mode, the storage controller carries out mode switching while inhibiting saving of data expressed in the first divided range and the second divided range.

3. A computer system according to claim 2, wherein the management system displays the cell mode information.

4. A computer system according to claim 3, wherein the storage system comprises a HDD,

the storage controller:

manages the nonvolatile memory device and the HDD as a storage device;

uses the storage device to define a storage pool, and manages an address space of the storage device by partitioning the address space into multiple segments;

uses the storage pool to provide a virtual logical unit to a computer; and

manages an address space of a virtual volume by partitioning the address space into multiple chunks, and either allocates or reallocates the segment to the chunk, and

the cell mode can be changed for each of the segments.

5. A computer system according to claim 4, wherein the management system displays a cell mode corresponding to a component included in the storage system, and

the component is:

a nonvolatile memory device;

a parity group comprising the nonvolatile memory device;

an internal logical unit either directly or indirectly comprising the nonvolatile memory device;

a storage pool either directly or indirectly comprising the nonvolatile memory device;

a tier either directly or indirectly comprising the nonvolatile memory device;

or

a virtual internal logical unit either directly or indirectly comprising the nonvolatile memory device.

6. A computer system according to claim 5, wherein a capacity of the component is displayed in association with a capacity of a segment which is included in the component and for which the cell mode is configured for each of one or more cell modes.

8. A computer system according to claim 1, wherein the characteristic is such that either a read time or a write time with respect to the nonvolatile memory device becomes longer as the number of bits to be stored is increased, or

a period during which data is able to be stored in the nonvolatile memory device becomes shorter as the number of bits to be stored is increased.

9. A computer system according to claim 4, wherein the storage controller uses the nonvolatile memory device to define a parity group, and

the cell mode can be changed for each parity group.

10. A computer system according to claim 4, wherein, in sending the cell mode change request, the management system:

receives an input of an I/O performance requirement;

identifies a segment for which the cell mode is to be changed based on an access measurement value related to the segment and measured by the storage controller, and on the I/O performance requirement; and

either directly or indirectly specifies the identified segment and sends the cell mode change request.

11. A computer system according to claim 4, wherein, in sending the cell mode change request, the management system:

receives an input denoting an I/O coverage ratio, which is a target value of a percentage of a measured value of accesses processed by a segment, which is in a first cell mode;

identifies a segment for which the cell mode is to be changed based on an access measurement value related to the segment and measured by the storage controller, and on the I/O coverage ratio; and

either directly or indirectly specifies the identified segment and sends the cell mode change request.

12. A computer system according to claim 4, wherein, in sending the cell mode change request, the management system:

receives an input denoting a ratio of a segment, which is in a first cell mode;

identifies a segment for which the cell mode is to be changed based on an access measurement value related to the segment and measured by the storage controller, and on the ratio of the segment; and

either directly or indirectly specifies the identified segment and sends the cell mode change request.

7. A computer system, comprising;

a storage system, which comprises a storage controller and one or more nonvolatile memory devices; and

a management system coupled to the storage system,

wherein the nonvolatile memory devices each comprise multiple memory cells, each memory cell having semiconductor characteristics enabling the storage of N-bits worth of data, and

wherein the storage controller;

stores storage configuration information indicating either a capacity or an address space of the nonvolatile memory device;

stores cell mode information indicating a cell mode for stipulating the number of bits to be stored in the memory cells;

receives a cell mode change request from the management system; and

either increases or decreases an amount of data to be stored in the nonvolatile memory device subsequent to the request, by changing the cell mode information in accordance with the request and changing either the capacity or the address space of the storage configuration information

wherein the memory cell is a flash memory cell for which a characteristic relating to data stored in the memory cell changes when the number of bits to be stored changes,

wherein data storage in the memory cell is carried out by using cell programming to change a threshold voltage, which is a voltage applied to a control gate when a prescribed amount of electrical current begins to flow between a source gate and a drain gate,

wherein in a first cell mode, a range between a minimum value and a maximum value of the threshold voltage is divided into sub-ranges of 2N and all the divided ranges are used to store N-bits worth of data in one memory cell, and

wherein in a second cell mode, the range is divided into first and second divided ranges, and the first and second divided ranges are used to store one-bit worth of data in one memory cell.