Suspended masses in micro-mechanical devices

• US 8,984,942 B2
• Filed: 02/10/2012
• Issued: 03/24/2015
• Est. Priority Date: 02/10/2012
• Status: Expired due to Fees

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Homeijer, Brian D.
• Primary Examiner(s): Williams, Hezron E.
• Assistant Examiner(s): Shabman, Mark A
• Application Number:
  US13/370,555
• Publication Number:
  US 20130205901A1
• Time in Patent Office: 1,138 Days
• Field of Search: 735/143.3
• US Class Current: 73/514.33
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: G01P 2015/0871 using stopper structures for limiting the travel of the seismic mass

Abstract

The micro-mechanical device includes a substrate with an internal cavity, a first surface, and an opposing second surface. A first trench is formed from the first surface of the substrate into the internal cavity. The first trench at least partially defines flexures. A second trench is formed from the second surface of the substrate into the internal cavity and at least partially defines a suspended mass. The suspended mass is connected by the flexures to the substrate.

Claims

1. A micro-mechanical device comprising:

a substrate comprising an internal cavity, a first surface, and an opposing second surface;

a first trench formed through the first surface of the substrate into the internal cavity, the first trench at least partially defining flexures; and

a second trench formed through the second surface of the substrate into the internal cavity, the second trench at least partially defining a suspended mass, in which the suspended mass is connected by the flexures to the substrate, in which the flexures are sandwiched between sides of the suspended mass and the surrounding substrate;

in which the second trench is narrower than the first trench such that under acceleration the second trench closes before the first trench and limits motion of the suspended mass.

2. The device of claim 1, in which the flexures are symmetrically disposed about a center of mass of the suspended mass such that the tendency of the suspended mass to twist under acceleration is reduced.

3. The device of claim 1, in which the second trench is a release trench formed around the perimeter of the suspended mass.

4. The device of claim 1, in which the second trench defines additional flexures.

5. The device of claim 1, further comprising bumpers formed by the second trench.

6. The device of claim 1, in which the first trench is formed into a first portion of the internal cavity and the second trench is formed into a different second portion of the internal cavity.

7. The device of claim 1, in which the suspended mass has the same thickness as the substrate and includes a portion of the first surface and a portion of the second surface.

8. The device of claim 1, in which the substrate is a silicon-on-insulator substrate.

9. The device of claim 8, in which the silicon-on-insulator substrate comprises a handle layer, an oxide layer, and a device layer, in which the second trench is a release trench formed in the device layer and the flexures are formed in the handle layer.

10. A method for forming the suspended mass of claim 1, the method comprising:

obtaining the substrate with an internal cavity;

etching the first trench through the first surface of the substrate and into a first portion of the cavity, the first trench at least partially defining a first flexure; and

etching the second trench through the second surface of the substrate and into a second portion of the cavity to at least partially define the suspended mass, in which the first flexure is sandwiched between the suspended mass and surrounding substrate and the suspended mass is suspended from the substrate by the first flexure, in which the suspended mass comprises a portion of the first surface and a portion of the second surface.

11. The method of claim 10, in which obtaining the substrate comprises combining multiple layers to form the substrate, the internal cavity being closed by an adjacent layer prior to etching said trenches.

12. The device of claim 1, in which the second trench defines a second set of flexures.

13. The device of claim 1, in which the flexures are to allow preferential motion of the suspended mass in an in-plane direction.

14. The device of claim 1, in which the flexures comprise a rectangular cross section with the major axis of the rectangular cross section being perpendicular to the first and second surfaces.

15. The device of claim 1, in which the internal cavity is closer to one of the surfaces than the other.