Photodiode device based on wide bandgap material layer and back-side illumination (BSI) CMOS image sensor and solar cell including the photodiode device

• US 8,987,751 B2
• Filed: 11/21/2011
• Issued: 03/24/2015
• Est. Priority Date: 01/12/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ihara, Hisanori
• Primary Examiner(s): Tran, Minh-Loan
• Assistant Examiner(s): Erdem, Fazli
• Application Number:
  US13/301,270
• Publication Number:
  US 20120175636A1
• Time in Patent Office: 1,219 Days
• US Class Current: 257/77
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.

Claims

1. A back-side-illumination (BSI) complementary-metal-oxide-semiconductor (CMOS) image sensor comprising:

a photodiode device including,

substrate;

at least one photodiode in the substrate; and

a wide bandgap material layer on a first surface of the substrate;

a metal interconnection layer disposed on a second surface of the semiconductor substrate;

an anti-reflective layer (ARL) on the wide bandgap material layer;

a color filter on the ARL; and

a microlens on the color filter;

wherein the ARL includes one of

a first structure including a silicon nitride (SiN_x) layer,

a second structure including a buffer layer and a hafnium oxide (HfO₂) layer,

a third structure including a silicon oxide (SiO₂) layer and a silicon oxynitride (SiON) layer,

a fourth structure including a buffer layer, a SiN_x layer, and a titanium oxide (TiO₂) layer,

a fifth structure including a buffer layer, a HfO₂ layer, and a TiO₂ layer,

a sixth structure including a buffer layer, a slot plasma antenna (SPA) oxide layer, a HfO₂ layer, and a TiO₂ layer,

a seventh structure including a buffer layer, an SPA oxide layer, a SiN_x layer, and a TiO₂ layer,

an eighth structure including a buffer layer, an SPA oxide layer, and a SiN_x layer,

a ninth structure including a buffer layer, an SPA oxide layer, a hafnium silicon oxide (HfSiO_x) layer, and a TiO₂ layer, and

a tenth structure including a buffer layer, a HfSiO_x layer, and a TiO₂ layer.

2. The sensor of claim 1, wherein

the wide bandgap material layer includes a material having a low absorption coefficient with respect to blue light.

3. The sensor of claim 1, wherein

the wide bandgap material layer includes one of p⁺-SiC, p⁺-SiN, and p⁺-SiCN.

4. The sensor of claim 1, further comprising:

a p⁺-silicon layer between the wide bandgap material layer and the substrate; and

the substrate includes a p⁻

-type silicon substrate.

5. The sensor of claim 1, wherein

the substrate includes a pixel array region and a peripheral circuit region, and

the wide bandgap material layer is on the entire pixel array region.

6. The sensor of claim 1, wherein

the substrate is includes a pixel array region and a peripheral circuit region, and

the wide bandgap material layer is formed only on a portion of the pixel array region corresponding to a blue pixel.

7. The sensor of claim 1, wherein

the wide bandgap material layer includes a p⁺-SiC layer obtained by implanting carbon (C) ions into a p⁺-silicon layer.

8. The sensor of claim 7, wherein

the substrate is a p⁻

-type silicon substrate,

the p⁺-silicon layer is on the substrate, and

the wide bandgap material layer is formed by implanting C ions into one of the entire region of the p⁺-silicon layer and a partial upper region of the p⁺-silicon layer.

9. The sensor of claim 7, wherein

the wide bandgap material layer is a laser annealed layer.

10. The sensor of claim 1, further comprising:

a passivation layer on the ARL.