Semiconductor light emitting device and light source unit

• US 8,987,764 B2
• Filed: 02/27/2013
• Issued: 03/24/2015
• Est. Priority Date: 05/25/2012
• Status: Active Grant

• Current Assignee: Alpad Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tomizawa, Hideyuki, Kojima, Akihiro, Shimada, Miyoko, Akimoto, Yosuke, Sugizaki, Yoshiaki, Furuyama, Hideto
• Primary Examiner(s): Tran, Minh-Loan
• Assistant Examiner(s): Erdem, Fazli
• Application Number:
  US13/779,690
• Publication Number:
  US 20130313589A1
• Time in Patent Office: 755 Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.

Claims

1. A semiconductor light emitting device comprising:

a semiconductor layer having a first face and a second face opposite to the first face, and including a light emitting layer;

a p-side electrode provided on the semiconductor layer on the second face side;

an n-side electrode provided on the semiconductor layer on the second face side;

an inorganic film covering the first face of the semiconductor layer; and

a resin layer which is provided on the inorganic film, and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the inorganic film and four side faces provided along an outer edge of the inorganic film and connected to the top surface, and the resin layer including a scattering substance which scatters the light emitted from the light emitting layer.

2. The device according to claim 1, wherein the scattering substance is a fine particle dispersed in the resin layer, and a grain size of the scattering substance is smaller than a peak wavelength of light emitted from the light emitting layer.

3. The device according to claim 2, wherein the scattering substance is silica or titanium oxide.

4. The device according to claim 1, wherein the inorganic film is a silicon nitride film.

5. The device according to claim 1, further comprising a first insulating film covering the semiconductor layer, the p-side electrode, and the n-side electrode.

6. The device according to claim 5, wherein the first insulating film covers a side face of the semiconductor layer connecting the first face to the second face, and the first insulating film contacts the inorganic film.

7. The device according to claim 5, wherein the first insulating film is an inorganic film.

8. The device according to claim 5, wherein the first insulating film is a silicon nitride film.

9. The device according to claim 5, further comprising:

a p-side interconnection electrically connected to the p-side electrode; and

an n-side interconnection electrically connected to the n-side electrode.

10. The device according to claim 9, further comprising a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection.

11. The device according to claim 10, wherein:

the p-side interconnection includes a p-side interconnection layer electrically connected to the p-side electrode, and a p-side metal pillar connected to the p-side interconnection layer, the p-side metal pillar being thicker than the p-side interconnection layer; and

the n-side interconnection includes an n-side interconnection layer electrically connected to the n-side electrode, and an n-side metal pillar connected to the n-side interconnection layer, the n-side metal pillar being thicker than the n-side interconnection layer.

12. The device according to claim 10, wherein the second insulating film is provided between the p-side interconnection and the n-side interconnection.

13. A light source unit comprising:

a plurality of semiconductor light emitting devices, each of the plurality of semiconductor light emitting devices including;

a semiconductor layer having a first face and a second face opposite to the first face, and including a light emitting layer;

a p-side electrode provided on the semiconductor layer on the second face side;

an n-side electrode provided on the semiconductor layer on the second face side;

a first insulating film covering the semiconductor layer, the p-side electrode, and the n-side electrode;

a p-side interconnection electrically connected to the p-side electrode;

an n-side interconnection electrically connected to the n-side electrode; and

a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection;

a mounting substrate including a plurality of interconnections, wherein the semiconductor light emitting devices are mounted on the mounting substrate, and wherein each of the plurality of semiconductor light emitting devices is electrically connected to another of the plurality of semiconductor light emitting devices via one of the plurality of interconnections and one of the p-side interconnection and the n-side interconnection;

a first resin layer covering the semiconductor light emitting devices mounted on the mounting substrate, wherein the first resin layer has a first portion provided on each of the semiconductor light emitting devices and a second portion provided on the mounting substrate between the semiconductor light emitting devices adjacent to each other, and wherein the first resin layer transmits lights emitted from the semiconductor light emitting devices; and

a second resin layer provided on the first portion and the second portion of the first resin layer, the second resin layer including fluorescent substances which are excited by the lights emitted from the semiconductor light emitting devices and emit lights having a wavelength different from a wavelength of the exciting lights.

14. The unit according to claim 13, wherein a refractive index of the first resin layer is greater than a refractive index of the first insulating film.

15. The unit according to claim 13, wherein the first resin layer includes a scattering substance configured to scatter light emitted from the light emitting layer.

16. The unit according to claim 15, wherein a distance between adjacent semiconductor light emitting devices is wider than a size of the semiconductor light emitting device in any arrangement direction on the mounting substrate.

17. The unit according to claim 13, wherein the semiconductor light emitting devices are disposed in a matrix configuration on the substrate.

18. The unit according to claim 13, wherein the semiconductor light emitting devices are disposed in a staggered configuration on the substrate.

19. The unit according to claim 13, wherein the semiconductor layer has a side face connected to the first face, wherein the first insulating film covers the side face, and the second portion of the first resin layer covers the side face via the first insulating film.

20. A light source unit comprising:

a plurality of semiconductor light emitting devices, each of the plurality of semiconductor light emitting devices including;

a semiconductor layer having a first face and a second face opposite to the first face, and including a light emitting layer;

a p-side electrode provided on the semiconductor layer on the second face side;

an n-side electrode provided on the semiconductor layer on the second face side;

a first insulating film covering the semiconductor layer, the p-side electrode, and the n-side electrode;

a p-side interconnection electrically connected to the p-side electrode;

an n-side interconnection electrically connected to the n-side electrode; and

a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection;

a mounting substrate including a plurality of interconnections, wherein the semiconductor light emitting devices are mounted on the mounting substrate, and wherein each of the plurality of semiconductor light emitting devices is electrically connected to another of the plurality of semiconductor light emitting devices via one of the plurality of interconnections and one of the p-side interconnection and the n-side interconnection;

a first resin layer covering the semiconductor light emitting devices mounted on the mounting substrate, wherein the first resin layer covers the semiconductor light emitting devices in an island shaped arrangement, and transmits lights emitted from the semiconductor light emitting devices;

a second resin layer provided on the first resin layer, and covering the mounting substrate, wherein the second resin layer includes fluorescent substances which are excited by the lights emitted from the semiconductor light emitting devices, and emit lights having a wavelength different from a wavelength of the exciting lights; and

a third resin layer provided on the mounting substrate between adjacent semiconductor light emitting devices, wherein the second resin layer is provided on the third resin layer, and the third resin layer includes a phosphor which has a light emission period longer than a light emission period of the fluorescent substances.

21. The light source unit according to claim 20, wherein the semiconductor layer has a side face connected to the first face, wherein the first insulating film covers the side face, and the third resin layer covers the side face via the first insulating film.