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Semiconductor light emitting device having roughness layer

  • US 8,987,768 B2
  • Filed: 04/09/2014
  • Issued: 03/24/2015
  • Est. Priority Date: 12/20/2007
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device, comprising:

  • a substrate;

    a first conductive semiconductor layer on the substrate;

    an active layer on the first conductive semiconductor layer;

    a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer including a top surface and a bottom surface opposing to the top surface, the bottom surface being adjacent to the active layer;

    a first roughness layer disposed on the second conductive semiconductor layer and including Al material, the first roughness layer including a random horn shape and formed with irregular intervals;

    a second roughness layer including Ti material on the first roughness layer; and

    at least one of a first AlGaN based semiconductor layer disposed on the active layer and a second AlGaN based semiconductor layer disposed under the active layer,wherein the first conductive semiconductor layer includes a first GaN layer and the second conductive semiconductor layer includes a second GaN layer,wherein the second conductive semiconductor layer includes a plurality of apexes on the top surface, the distance between at least two apexes of the plurality of apexes is of about 0.3 μ

    m to about 1.0 μ

    m,wherein the second roughness layer includes a lower surface having a shape corresponding to the top surface of the second conductive semiconductor layer, andwherein the second roughness layer includes an upper surface having a shape corresponding to a top surface of the first roughness layer.

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