FinFETs and methods for forming the same
First Claim
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1. A structure comprising:
- a substrate comprising a fin, the fin having a first surface portion of a sidewall and a second surface portion of the sidewall, the first surface portion being at and extending below a top surface edge of an isolation region in the substrate, the first surface portion adjoining the isolation region, the first surface portion being in a plane, the second surface portion comprising at least one lattice shift away from the plane;
a gate dielectric on the second surface portion of the sidewall, the gate dielectric contacting the sidewall on at least a portion of the at least one lattice shift; and
a gate electrode on the gate dielectric.
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Abstract
A finFET and methods for forming a finFET are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode. The substrate comprises the fin. The fin has a major surface portion of a sidewall, and the major surface portion comprises at least one lattice shift. The at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the sidewall. The gate electrode is on the gate dielectric.
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Citations
19 Claims
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1. A structure comprising:
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a substrate comprising a fin, the fin having a first surface portion of a sidewall and a second surface portion of the sidewall, the first surface portion being at and extending below a top surface edge of an isolation region in the substrate, the first surface portion adjoining the isolation region, the first surface portion being in a plane, the second surface portion comprising at least one lattice shift away from the plane; a gate dielectric on the second surface portion of the sidewall, the gate dielectric contacting the sidewall on at least a portion of the at least one lattice shift; and a gate electrode on the gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 12)
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7. A structure comprising:
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a fin on a substrate, the fin having a first surface portion of a sidewall of the fin and a second surface portion of the sidewall of the fin, the substrate comprising an isolation region adjoining the first surface portion, the first surface portion being in a sidewall plane; a gate dielectric adjoining atoms in multiple parallel planes on the second surface portion of the sidewall of the fin, the multiple parallel planes being perpendicular to a major surface of the substrate, neighboring pairs of the multiple parallel planes being separated by at least one lattice constant, a first group of the atoms being in a first one of the multiple parallel planes, a second group of the atoms being in a second one of the multiple parallel planes, at least some of the atoms not being in the sidewall plane; and a gate electrode on the gate dielectric. - View Dependent Claims (8, 9, 10, 11, 13)
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14. A structure comprising:
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a fin on a substrate, the fin having a first surface portion of a sidewall and a second surface portion of the sidewall, the first surface portion being in a plane, the second surface portion comprising at least one lattice shift away from the plane; a gate dielectric on the second surface portion of the sidewall; a gate electrode on the gate dielectric; and an isolation region in the substrate, the isolation region adjoining the first surface portion of the sidewall proximate an upper surface of the isolation region. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification