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FinFETs and methods for forming the same

  • US 8,987,791 B2
  • Filed: 02/27/2013
  • Issued: 03/24/2015
  • Est. Priority Date: 02/27/2013
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a substrate comprising a fin, the fin having a first surface portion of a sidewall and a second surface portion of the sidewall, the first surface portion being at and extending below a top surface edge of an isolation region in the substrate, the first surface portion adjoining the isolation region, the first surface portion being in a plane, the second surface portion comprising at least one lattice shift away from the plane;

    a gate dielectric on the second surface portion of the sidewall, the gate dielectric contacting the sidewall on at least a portion of the at least one lattice shift; and

    a gate electrode on the gate dielectric.

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