Thin film transistor, method for manufacturing the same, and semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a gate electrode over a substrate;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
an oxide layer over the oxide semiconductor layer;
a first metal layer and a second metal layer in direct contact with the oxide semiconductor layer; and
a third metal layer over the first metal layer and a fourth metal layer over the second metal layer,wherein a bottom end portion of the first metal layer extends beyond an end portion of the third metal layer,wherein a bottom end portion of the second metal layer extends beyond an end portion of the fourth metal layer, andwherein the oxide layer is thicker than the first metal layer and the second metal layer.
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Abstract
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
181 Citations
12 Claims
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1. A semiconductor device comprising:
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a gate electrode over a substrate; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; an oxide layer over the oxide semiconductor layer; a first metal layer and a second metal layer in direct contact with the oxide semiconductor layer; and a third metal layer over the first metal layer and a fourth metal layer over the second metal layer, wherein a bottom end portion of the first metal layer extends beyond an end portion of the third metal layer, wherein a bottom end portion of the second metal layer extends beyond an end portion of the fourth metal layer, and wherein the oxide layer is thicker than the first metal layer and the second metal layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode over a substrate; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; an oxide layer over the oxide semiconductor layer; a first metal layer and a second metal layer in direct contact with the oxide semiconductor layer; and a third metal layer over the first metal layer and a fourth metal layer over the second metal layer, wherein a bottom end portion of the first metal layer extends beyond an end portion of the third metal layer, wherein a bottom end portion of the second metal layer extends beyond an end portion of the fourth metal layer, wherein the oxide layer is thicker than the first metal layer and the second metal layer, and wherein the oxide layer is thinner than the third metal layer and the fourth metal layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification