Backside stimulated sensor with background current manipulation
First Claim
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1. A CMOS (Complementary Metal Oxide Semiconductor) pixel to sense at least one stimulus selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus, comprising:
- a substrate including a backside;
a source coupled with the substrate to generate a background current;
a first diode, and a detection system electrically coupled with the substrate to measure an effect on the background current;
at least one charge sensitive layer having an electrical charge and that is coupled with the backside, wherein the at least one charge sensitive layer is to interact with an analyte that is to be exposed to the at least one charge sensitive layer, and wherein interaction of the at least one charge sensitive layer with the analyte is to provide a non-light emitting stimulus that is to alter the electrical charge of the at least one charge sensitive layer and is to affect the measurable effect on the background current which is measurable by the detection system; and
a reference electrode proximate to the backside of the substrate.
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Abstract
A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.
69 Citations
23 Claims
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1. A CMOS (Complementary Metal Oxide Semiconductor) pixel to sense at least one stimulus selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus, comprising:
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a substrate including a backside; a source coupled with the substrate to generate a background current; a first diode, and a detection system electrically coupled with the substrate to measure an effect on the background current; at least one charge sensitive layer having an electrical charge and that is coupled with the backside, wherein the at least one charge sensitive layer is to interact with an analyte that is to be exposed to the at least one charge sensitive layer, and wherein interaction of the at least one charge sensitive layer with the analyte is to provide a non-light emitting stimulus that is to alter the electrical charge of the at least one charge sensitive layer and is to affect the measurable effect on the background current which is measurable by the detection system; and a reference electrode proximate to the backside of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An ion sensor comprising:
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a substrate having a frontside and a backside opposite the frontside, the frontside having a metal stack over Complementary Metal Oxide Semiconductor (CMOS) circuitry; at least one of a diode and a structure, which is disposed within the substrate, and which is operable to generate a background current; a circuit electrically coupled with the substrate and operable to measure the background current; an electrical charge located at the backside of the substrate, the electrical charge having a magnitude and to be coupled with an ionic charge magnitude of an electrolyte that is to be disposed on a surface at the backside of the substrate, wherein the coupling of the electrical charge with the electrolyte, without a need for light emission, is to cause a change in the background current that is to be measured by the circuit; and a reference electrode proximate to the backside. - View Dependent Claims (18, 19, 20)
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21. An ion sensor system comprising:
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a semiconductor substrate having a backside opposite a frontside; an array of CMOS (Complementary Metal Oxide Semiconductor) pixels disposed within the semiconductor substrate; a charge sensitive layer coupled along and adjacent to the backside of the semiconductor substrate; and a reference electrode positioned to contact an electrolyte test sample disposed between the reference electrode and the backside of the semiconductor substrate. - View Dependent Claims (22, 23)
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Specification