Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern

• US 8,987,850 B2
• Filed: 03/04/2014
• Issued: 03/24/2015
• Est. Priority Date: 07/26/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Oh, Sechung, Lee, Jangeun, Kim, Woojin, Shin, Heeju
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US14/196,666
• Publication Number:
  US 20140183674A1
• Time in Patent Office: 385 Days
• Field of Search: 257/421, 257/422, 257/424, 257/425, 257/426, 257/E27.006
• US Class Current: 257/422
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.

Claims

1. A magnetic memory device comprising:

a reference pattern on a substrate;

a free pattern on the substrate;

a tunnel barrier pattern between the free pattern and the reference pattern; and

a surface local region partially in one surface of the free pattern and comprising a material different from the free pattern.

2. The magnetic memory device of claim 1, wherein the surface local region comprises an oxide formed by oxidizing a portion of the one surface of the free pattern or a nitride formed by nitrifying a portion of the one side of the free pattern.

3. The magnetic memory device of claim 1, wherein the free pattern comprises a first surface adjacent to the tunnel barrier pattern and a second surface opposite to the first surface;

and

the surface local region is partially in the second surface of the free pattern.

4. The magnetic memory device of claim 3, further comprising a thin pattern on the second surface of the free pattern.

5. The magnetic memory device of claim 4, wherein the thin pattern comprises a first portion having a first thickness and a second portion having a thinner second thickness than the first thickness;

and

the surface local region is directly below the second portion.

6. The magnetic memory device of claim 4, wherein the thin pattern comprises a first portion of an amorphous state and a second portion of a crystalline state;

and

the surface local region is directly below the second portion of the thin pattern.

7. The magnetic memory device of claim 4, wherein the reference pattern, the tunnel barrier pattern, and the free pattern correspond to a first reference pattern, a first tunnel barrier pattern, and a first free pattern, respectively, and

further comprising:

a second free pattern comprising a first surface and a second surface opposite to each other;

a second reference pattern on the first surface of the second free pattern; and

a second tunnel barrier pattern between the first surface of the second free pattern and the second reference pattern,

wherein the thin pattern is between the second surface of the first free pattern and the second surface of the second free pattern.

8. The magnetic memory device of claim 1, further comprising particles within the free pattern, wherein the particles comprise a material different from the free pattern.

9. The magnetic memory device of claim 1, wherein the reference pattern comprises a first magnetic material;

the free pattern comprises a second magnetic material;

each of the first and second magnetic materials comprises iron (Fe); and

a content ratio of iron (Fe) in the second magnetic material is equal to or greater than a content ratio of iron (Fe) in the first magnetic material.