Semiconductor package
First Claim
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1. A semiconductor package, comprising:
- a substrate;
a first passivation layer disposed on the substrate;
an under bump metallurgy layer disposed on the first passivation layer;
a passive device disposed on the under bump metallurgy layer;
an additional under bump metallurgy layer disposed on the first passivation layer, isolated from the under bump metallurgy layer;
a conductive bump disposed on the additional under bump metallurgy layer; and
a conductive pillar disposed between the additional under bump metallurgy layer and the conductive bump, wherein the conductive pillar and the passive device are at the same level.
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Abstract
The invention provides a semiconductor package. The semiconductor package includes a substrate. A first passivation layer is disposed on the substrate. An under bump metallurgy layer is disposed on the first passivation layer. A passive device is disposed on the under bump metallurgy layer.
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Citations
24 Claims
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1. A semiconductor package, comprising:
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a substrate; a first passivation layer disposed on the substrate; an under bump metallurgy layer disposed on the first passivation layer; a passive device disposed on the under bump metallurgy layer; an additional under bump metallurgy layer disposed on the first passivation layer, isolated from the under bump metallurgy layer; a conductive bump disposed on the additional under bump metallurgy layer; and a conductive pillar disposed between the additional under bump metallurgy layer and the conductive bump, wherein the conductive pillar and the passive device are at the same level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor package, comprising:
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an under bump metallurgy layer disposed on a substrate; a passive device disposed on the under bump metallurgy layer; a solder disposed on the passive device; an additional under bump metallurgy layer disposed on the substrate, isolated from the under bump metallurgy; a conductive bump disposed on the additional under bump metallurgy; and a conductive pillar disposed between the additional under bump metallurgy and the conductive bump, wherein the conductive pillar and the passive device are at the same level. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification