Method for providing electrical connections to spaced conductive lines

• US 8,987,906 B2
• Filed: 04/22/2014
• Issued: 03/24/2015
• Est. Priority Date: 05/20/2009
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej, Sills, Scott
• Primary Examiner(s): Coleman, William D
• Application Number:
  US14/258,476
• Publication Number:
  US 20140225264A1
• Time in Patent Office: 336 Days
• US Class Current: 257/754
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/28035 the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities H01L21/28105 takes precedence
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 21/76895 Local interconnects; Local pads, as exemplified by patent document EP0896365
• CPC Class Codes: H01L 21/823871 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 2224/06138 being disposed in a single wiring level, i.e. planar layout
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10B 12/482 Bit lines
• CPC Class Codes: H10B 12/485 Bit line contacts
• CPC Class Codes: H10B 12/488 Word lines

Abstract

An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.

Claims

1. An integrated circuit structure comprising:

a plurality of linearly extending material stack lines each comprising a polysilicon material, a metal silicide material, and an oxide top material, the material stack lines formed as part of the integrated circuit and each having an angled end face at a different location along the linearly extending direction of the material stack lines; and

a contact landing pad formed in electrical contact with each angled end face.

2. The integrated circuit structure of claim 1, wherein the material stack lines have a half-pitch of less than 45 nm.

3. The integrated circuit structure of claim 1, wherein the material stack lines have a half-pitch of less than 20 nm.

4. The integrated circuit structure of claim 1, wherein the angled end faces are at an angle of between 5 degrees and 30 degrees relative to the linearly extending direction.

5. The integrated circuit structure of claim 1, wherein the material stack lines are parallel material stack lines.

6. The integrated circuit structure of claim 1, wherein the material stack lines form at least one of wordlines and bitlines of a memory device.

7. The integrated circuit structure of claim 1, wherein the material stack lines are at least partially covered by an insulating material.

8. The integrated circuit structure of claim 1, wherein the contact landing pads each comprise a polysilicon material, a metal silicide material, and an oxide top material.

9. The integrated circuit structure of claim 8, further comprising:

an insulating material formed over the material stack lines and the contact landing pads;

a respective via formed through the insulating material and the oxide top material of each contact landing pad; and

a respective conductive material formed in each respective via and in electrical connection with the metal silicide material of each respective contact landing pad.

10. An integrated circuit structure comprising:

a plurality of linearly extending block copolymer cylinders formed as part of the integrated circuit structure and each having an angled end face at a different location along the linearly extending direction of the block copolymer cylinders; and

a contact landing pad formed in contact with each angled end face.

11. The integrated circuit structure of claim 10, wherein said block copolymer cylinders comprise polystyrene.

12. The integrated circuit structure of claim 10, wherein said block copolymer cylinders are metalized block copolymer cylinders.

13. The integrated circuit structure of claim 10, wherein said block copolymer cylinders have a half-pitch of less than 20 nm.

14. The integrated circuit structure of claim 10, wherein said angled end faces are at an angle of between 5 degrees and 30 degrees relative to the linearly extending direction.

15. The integrated circuit structure of claim 10, wherein the block copolymer cylinders are parallel block copolymer cylinders.

16. The integrated circuit structure of claim 10, wherein the block copolymer cylinders form at least one of wordlines and bitlines of a memory device.

17. The integrated circuit structure of claim 10, further comprising:

a material stack formed below the block copolymer cylinders.

18. The integrated circuit structure of claim 10, wherein said block copolymer cylinders include a metal seed material incorporated in the polymer structure by blending or reacting.

19. The integrated circuit structure of claim 10, wherein said block copolymer cylinders include a metal seed material selectively formed at the angled end faces.

20. The integrated circuit structure of claim 17, wherein the material stack comprises a polysilicon material, a metal silicide material, and an oxide top material.