Hybrid optical source with semiconductor reflector

• US 8,988,770 B2
• Filed: 03/14/2013
• Issued: 03/24/2015
• Est. Priority Date: 03/14/2013
• Status: Active Grant

• Current Assignee: Oracle International Corporation (Oracle Corporation)
• Original Assignee: Oracle International Corporation (Oracle Corporation)
• Inventors: Zheng, Xuezhe, Krishnamoorthy, Ashok V., Shubin, Ivan, Cunningham, John E., Li, Guoliang, Luo, Ying L.
• Primary Examiner(s): Diacou, Ari M
• Application Number:
  US13/831,541
• Publication Number:
  US 20140268312A1
• Time in Patent Office: 740 Days
• Field of Search: 359/344
• US Class Current: 359/344
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
• CPC Class Codes: H01S 5/1025 Extended cavities
• CPC Class Codes: H01S 5/1028 Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
• CPC Class Codes: H01S 5/141 using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence
• CPC Class Codes: H01S 5/142 which comprises an additional resonator
• CPC Class Codes: H01S 5/185 having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] comprising a photonic bandgap structure H01S5/11
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source.

Claims

1. A hybrid optical source, comprising:

an optical amplifier configured to provide an optical signal having a range of wavelengths;

a semiconductor reflector, mechanically and optically coupled to the optical amplifier, configured to reflect the optical signal over the range of wavelengths to change a direction of propagation of the optical signal; and

a semiconductor-on-insulator chip optically coupled to the semiconductor reflector, wherein the semiconductor-on-insulator chip includes;

a substrate;

an oxide layer disposed on the substrate; and

a semiconductor layer disposed on the oxide layer and having a surface facing the semiconductor reflector, wherein the semiconductor layer includes;

an optical coupler configured to redirect the optical signal to and from a plane of the semiconductor layer;

an optical waveguide configured to convey the optical signal; and

a reflector configured to at least partially reflect a wavelength in the optical signal, wherein the optical amplifier, the semiconductor reflector, the optical coupler, the optical waveguide and the reflector define an optical cavity in the hybrid optical source.

2. The hybrid optical source of claim 1, wherein the optical coupler includes a diffraction grating.

3. The hybrid optical source of claim 1, wherein the optical amplifier includes a semiconductor optical amplifier.

4. The hybrid optical source of claim 3, wherein the semiconductor optical amplifier includes a III-V semiconductor.

5. The hybrid optical source of claim 1, wherein the wavelength reflected by the reflector is tunable.

6. The hybrid optical source of claim 1, wherein the reflector includes a mirror.

7. The hybrid optical source of claim 1, wherein the semiconductor reflector includes a mirror etched into a semiconductor substrate.

8. The hybrid optical source of claim 7, wherein the semiconductor substrate includes a cavity defined by an edge;

and

wherein the optical amplifier is disposed in the cavity so that the optical amplifier and the semiconductor reflector are aligned.

9. The hybrid optical source of claim 7, wherein the semiconductor substrate includes silicon.

10. The hybrid optical source of claim 1, wherein a distance between the semiconductor reflector and the surface of the semiconductor layer is less than a predefined length so that divergence of the optical signal is reduced during optical coupling between the semiconductor reflector and the optical coupler.

11. The hybrid optical source of claim 1, wherein the semiconductor layer includes silicon.

12. A system, comprising:

a processor;

memory; and

a hybrid optical source, wherein the hybrid optical source includes;

an optical amplifier configured to provide an optical signal having a range of wavelengths;

a semiconductor reflector, mechanically and optically coupled to the optical amplifier, configured to reflect the optical signal over the range of wavelengths to change a direction of propagation of the optical signal; and

a semiconductor-on-insulator chip optically coupled to the semiconductor reflector, wherein the semiconductor-on-insulator chip includes;

a substrate;

an oxide layer disposed on the substrate; and

a semiconductor layer disposed on the oxide layer and having a surface facing the semiconductor reflector, wherein the semiconductor layer includes;

an optical coupler configured to redirect the optical signal to and from a plane of the semiconductor layer;

an optical waveguide configured to convey the optical signal; and

a reflector configured to at least partially reflect a wavelength in the optical signal, wherein the optical amplifier, the semiconductor reflector, the optical coupler, the optical waveguide and the reflector define an optical cavity in the hybrid optical source.

13. The system of claim 12, wherein the optical coupler includes a diffraction grating.

14. The system of claim 12, wherein the optical amplifier includes a semiconductor optical amplifier.

15. The system of claim 12, wherein the wavelength reflected by the reflector is tunable.

16. The system of claim 12, wherein the reflector includes a mirror.

17. The system of claim 12, wherein the semiconductor reflector includes a mirror etched into a semiconductor substrate.

18. The system of claim 17, wherein the semiconductor substrate includes a cavity defined by an edge;

and

wherein the optical amplifier is disposed in the cavity so that the optical amplifier and the semiconductor reflector are aligned.

19. The system of claim 17, wherein the semiconductor substrate includes silicon.

20. A method for providing an optical signal having a wavelength, the method comprising:

outputting an optical signal having a range of wavelengths from an optical amplifier;

reflecting the optical signal over the range of wavelengths to change a direction of propagation of the optical signal using a semiconductor reflector mechanically and optically coupled to the optical amplifier;

redirecting the optical signal to and from a plane of a semiconductor layer in a semiconductor-on-insulator chip optically coupled to the semiconductor reflector using an optical coupler in the semiconductor layer, wherein the semiconductor-on-insulator chip includes;

a substrate, an oxide layer disposed on the substrate, and the semiconductor layer disposed on the oxide layer and having a surface facing the semiconductor reflector;

conveying the optical signal in an optical waveguide in the semiconductor layer; and

at least partially reflecting the wavelength in the optical signal using a reflector in the semiconductor layer, wherein the optical amplifier, the semiconductor reflector, the optical coupler, the optical waveguide and the reflector define an optical cavity.