Method for manufacturing an opto-microelectronic device

• US 8,993,368 B2
• Filed: 04/11/2012
• Issued: 03/31/2015
• Est. Priority Date: 04/14/2011
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Rossini, Umberto
• Primary Examiner(s): Sarkar, Asok K
• Application Number:
  US14/111,458
• Publication Number:
  US 20140113404A1
• Time in Patent Office: 1,084 Days
• Field of Search: 257/59, 257/72, 257/222, 257/225, 257/440, 257/E21.352, 438/57, 438/60, 438/73, 438/458
• US Class Current: 438/73
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G02F 1/136281 having a transmissive semiconductor substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

Method for manufacturing a microelectronic device from a first substrate (10), including the production of at least one electronic component in the semi-conductor substrate after transferring the first substrate (10) onto a second substrate (20), characterized in that it comprises:

• • a first phase carried out prior to the transfer, and including forming at least one pattern made of a sacrificial material in a layer of the first substrate (10),
  • a second phase carried out after the transfer and including the substitution of the electronic component for the pattern.

Claims

1. A method for manufacturing an opto-microelectronic device from a first semiconductor substrate, comprising the production of at least one electrode of a pixel after a transfer of the first semiconductor substrate onto a second substrate, the method comprising:

a first phase carried out before the transfer and comprising;

i) forming at least one pattern made of a sacrificial material in a layer formed in the first substrate surface,

ii) a lateral delimitation of the at least one pattern in the layer of the first substrate surface by an edge of a boundary material differing from the sacrificial material,

a second phase carried out after the transfer and comprising a substitution of the electrode for the pattern including a removal of the sacrificial material of the pattern by a selective etching so configured as to attack the sacrificial material of the pattern and to preserve the boundary material without using photolithography.

2. The method according to claim 1, wherein silicon nitride or polycrystalline silicon is selected as the boundary material.

3. The method according to claim 1, wherein the pattern is a box entirely surrounded laterally by the edge.

4. The method according to claim 3, wherein the edge is obtained by deposition around the pattern of the boundary material and wherein a layer of the boundary material is formed above the layer comprising the pattern.

5. The method according to claim 4, wherein the edge is of a boundary material different from the boundary material of the layer of the boundary material.

6. The method according to claim 5, wherein the second phase comprises, after removal of the sacrificial material of the pattern, removing the layer of boundary material.

7. The method according to claim 6, wherein the removal of the layer of the boundary material is carried out by etching controlled in time so as to remove the layer of the boundary material and to preserve the edge.

8. The method according to claim 4, comprising, after the deposition around the pattern, the thinning of the layer of the boundary material until a thickness lower than the minimum lateral dimension and the thickness of the edge is obtained.

9. The method according to claim 4, wherein the first phase comprises forming a light screen superimposed on the pattern.

10. The method according to claim 9, wherein the screen is formed by photolithography in a layer formed on the first substrate and is superimposed on the layer including the pattern.

11. The method according to claim 9, wherein the screen is formed in an electrically conductive material.

12. The method according to claim 11, wherein the electrically conductive material is tungsten.

13. The method according to claim 11, comprising:

a step of forming a pattern covering the screen;

a step of depositing a layer of silicon oxide;

a step of levelling the layer of silicon oxide by polishing;

a step of forming a layer of single-crystal silicon on the layer of silicon oxide by transfer from a donor substrate.

14. The method according to claim 13, wherein the transfer of the donor substrate comprises turning over and bonding the donor substrate on the layer of silicon oxide followed by a heat treatment so configured as to break the donor substrate and leave the layer of single-crystal silicon.

15. The method according to claim 13, comprising the production, in the layer of single-crystal silicon, a selection transistor and the production of a via electrically interconnecting the selection transistor and the screen.

16. The method according to claim 15, wherein the production of the via comprises:

etching from the layer of single-crystal silicon;

stopping the etching on the pattern;

selective etching of the pattern so configured as to remove the pattern material without removing the screen material.

17. The method according to claim 1, wherein the substitution of the electrode for the pattern includes, after removal of the sacrificial material of the pattern, a deposition of the electrode material.

18. The method according to claim 17, comprising a thinning of the thickness of the deposition of the electronic component material to the level of the thickness of the edge.

19. The method according to claim 1, comprising, before the transfer, forming the layer including the pattern on an underlying layer of the first substrate, followed by forming at least one layer including at least one additional electronic component then forming a connecting layer.

20. The method according to claim 19, wherein the transfer of the first substrate onto the second substrate is carried out by the connecting layer of the first substrate and wherein the thickness of the first substrate is reduced by the underlying layer until the layer including the pattern is reached.

21. The method according to claim 1, comprising, before the transfer, forming at least one layer including at least one additional electronic component on an underlying layer of the first substrate, followed by forming the layer including the pattern and then forming a connecting layer, wherein the transfer comprises:

transfer of the first substrate by an outer face of the connecting layer onto an intermediate substrate,

reduction in the thickness of the first substrate by the underlying layer until an inner face is reached,

transfer of the first substrate by the inner face onto the second substrate,

removal of the intermediate substrate and a reduction in the thickness of the first substrate by the connecting layer until the layer including the pattern is reached.

22. The method according to claim 1, wherein forming at least one pattern comprises a phase of photolithography.

23. The method according to claim 1, wherein the sacrificial material is silicon oxide.

24. The method according to claim 1, for manufacturing an imaging device having a diagonal of less than 2.54 cm with transmission lighting.