Oxide semiconductor film and semiconductor device

• US 8,994,021 B2
• Filed: 03/06/2014
• Issued: 03/31/2015
• Est. Priority Date: 12/03/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Tsubuku, Masashi, Akimoto, Kengo, Ohara, Hiroki, Honda, Tatsuya, Omata, Takatsugu, Nonaka, Yusuke, Takahashi, Masahiro, Miyanaga, Akiharu
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US14/199,257
• Publication Number:
  US 20140183532A1
• Time in Patent Office: 390 Days
• Field of Search: 257/43, 257/49, 257/57, 257/59, 257/347, 438150-151, 438/163, 438/458, 438/585, 438/770, 438/787, 438/795
• US Class Current: 257/43
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/1033 with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with channel and gate aligned in the lengthwise direction H01L29/42376; with buried channel H01L29/7838
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm⁻¹ and less than or equal to 0.7 nm⁻¹ in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm⁻¹ and less than or equal to 4.1 nm⁻¹. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm⁻¹ and less than or equal to 1.4 nm⁻¹ in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm⁻¹ and less than or equal to 7.1 nm⁻¹.

Claims

1. An oxide semiconductor film comprising a crystalline region,

wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm⁻

1 and less than or equal to 0.7 nm<sup>−

1</sup> in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm<sup>−

1</sup> and less than or equal to 4.1 nm<sup>−

1</sup>, and

wherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm<sup>−

1</sup> and less than or equal to 1.4 nm<sup>−

1</sup> in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm<sup>−

1</sup> and less than or equal to 7.1 nm<sup>−

1</sup>.

2. The oxide semiconductor film according to claim 1, wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film.

3. The oxide semiconductor film according to claim 1, wherein the oxide semiconductor film is in a non-single crystal state.

4. The oxide semiconductor film according to claim 2, wherein measurement of the electron diffraction intensity is performed by irradiation with an electron beam from a direction of the c-axis.

5. The oxide semiconductor film according to claim 1, wherein a spin density of a signal in a region where a g value is in a vicinity of 1.93 in ESR measurement of the oxide semiconductor film is lower than 1.3×

10¹⁸ spins/cm³.

6. The oxide semiconductor film according to claim 1, wherein the oxide semiconductor film comprises indium and zinc.

7. A semiconductor device comprising the oxide semiconductor film according to claim 1, the semiconductor device further comprising:

a gate electrode; and

a gate insulating film between the gate electrode and the oxide semiconductor film.