Nitride LED with a schottky electrode penetrating a transparent electrode

• US 8,994,054 B2
• Filed: 08/02/2011
• Issued: 03/31/2015
• Est. Priority Date: 02/20/2009
• Status: Active Grant

• Current Assignee: Alpad Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Muramoto, Eiji, Nunoue, Shinya, Oka, Toshiyuki
• Primary Examiner(s): Toledo, Fernando
• Assistant Examiner(s): Bradford, Peter
• Application Number:
  US13/195,926
• Publication Number:
  US 20110284908A1
• Time in Patent Office: 1,337 Days
• Field of Search: 257/98, 257/E33.068, 257/E33.062, 438/22
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

Claims

1. A semiconductor light emitting device, comprising:

a stacked structural body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode electrically connected to the first semiconductor layer;

a second electrode forming an ohmic contact with the second semiconductor layer, the second electrode being translucent to light emitted from the light emitting layer, the second electrode including an oxide of at least one element selected from the group consisting of In, Zn, Sn, Ni, Mg, Cu, Au, Pd, Rh, and Ga;

a third electrode being silver, the third electrode penetrating through the second electrode and electrically connected to the second electrode to contact with the second semiconductor layer; and

a fourth electrode, the third electrode being disposed between the fourth electrode and the second semiconductor layer, a shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer being same as a shape of the third electrode as viewed along the stacking direction;

wherein

the third electrode includes a first portion and a second portion, the first portion being provided between the second semiconductor layer and the fourth electrode, the first portion contacting the second semiconductor layer and the fourth electrode, the second portion provided between the second electrode and the fourth electrode,

the first portion has a first face opposing the fourth electrode,

the second portion has a second face opposing the fourth electrode, and

a first distance between the first face and the second semiconductor layer is shorter than a second distance between the second face and the second semiconductor layer.

2. The device according to claim 1, wherein a transmittance of the second electrode to the emitted light is greater than a transmittance of the third electrode to the emitted light.

3. The device according to claim 2, wherein,

the first semiconductor layer is made of an n-type semiconductor;

the second semiconductor layer is made of a p-type semiconductor and opposes a part of the first semiconductor layer;

the stacked structural body has a first major surface on a side of the second semiconductor layer; and

the first electrode, the second electrode, the third electrode, and the fourth electrode are provided on a side of the first major surface of the stacked structural body.

4. The device according to claim 2, wherein:

the first semiconductor layer is made of a p-type semiconductor;

the second semiconductor layer is made of an n-type semiconductor;

the stacked structural body has a second major surface on a side of the first semiconductor layer and a third major surface on a side of the second semiconductor layer;

the first electrode is provided on a side of the second major surface of the stacked structural body; and

the second electrode, the third electrode, and the fourth electrode are provided on a side of the third major surface of the stacked structural body.

5. The device according to claim 4, wherein the third electrode covers a part of the second electrode.

6. The device according to claim 5, wherein the fourth electrode is a pad electrode.

7. The device according to claim 6, wherein the first semiconductor layer and the second semiconductor layer include In_xAl_yGa_1-x-yN (0≦

x≦

1, 0≦

y≦

1, x+y≦

1).

8. The device according to claim 1, wherein a conductivity of the third electrode is lower than a conductivity of the second electrode.

9. The device according to claim 1, wherein the reflectance of the third electrode to the emitted light is 80% or more.

10. The device according to claim 1, wherein the fourth electrode includes an Ni layer provided on the third electrode and an Au layer provided on the Ni layer.

11. The device according to claim 10, wherein the emitted light is emitted from a side on which the second electrode of the stacked structural body is provided.

12. The device according to claim 1, wherein the fourth electrode includes a stacked body including a Ti layer provided on the third electrode, a Pt layer provided on the Ti layer, and an Au layer provided on the Pt layer.

13. A semiconductor light emitting apparatus, comprising:

a semiconductor light emitting device, including;

a stacked structural body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode electrically connected to the first semiconductor layer;

a second electrode forming an ohmic contact with the second semiconductor layer, the second electrode being translucent to light emitted from the light emitting layer, the second electrode including an oxide of at least one element selected from the group consisting of In, Zn, Sn, Ni, Mg, Cu, Au, Pd, Rh, and Ga;

a third electrode being silver, the third electrode penetrating through the second electrode and electrically connected to the second electrode to contact with the second semiconductor layer; and

a fourth electrode, the third electrode being disposed between the fourth electrode and the second semiconductor layer, a shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer being same as a shape of the third electrode as viewed along the stacking direction, a reflectance of the third electrode to the emitted light is greater than a reflectance of the fourth electrode to the emitted light; and

a wavelength conversion layer configured to absorb light emitted from the semiconductor light emitting device and emit light having a different wavelength from a wavelength of the light emitted from the semiconductor light emitting device;

wherein

the third electrode includes a first portion and a second portion, the first portion being provided between the second semiconductor layer and the fourth electrode, the first portion contacting the second semiconductor layer and the fourth electrode, the second portion provided between the second electrode and the fourth electrode,

the first portion has a first face opposing the fourth electrode,

the second portion has a second face opposing the fourth electrode, and

a first distance between the first face and the second semiconductor layer is shorter than a second distance between the second face and the second semiconductor layer.