Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
First Claim
1. A semiconductor construction, comprising:
- a III-V semiconductor substrate that contains indium;
at least first and second II-VI semiconductor layers formed atop the III-V semiconductor substrate, the first II-VI semiconductor layer being disposed between the second II-VI semiconductor layer and the III-V semiconductor substrate; and
an interface disposed between the III-V semiconductor substrate and the first II-VI semiconductor layer;
wherein the first II-VI semiconductor layer is adapted to limit the migration of indium from the III-V semiconductor substrate to the second II-VI semiconductor layer, and the first II-VI semiconductor layer includes an n-type dopant in an amount effective to deplete indium that has migrated from the III-V semiconductor substrate.
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Abstract
We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
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Citations
12 Claims
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1. A semiconductor construction, comprising:
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a III-V semiconductor substrate that contains indium; at least first and second II-VI semiconductor layers formed atop the III-V semiconductor substrate, the first II-VI semiconductor layer being disposed between the second II-VI semiconductor layer and the III-V semiconductor substrate; and an interface disposed between the III-V semiconductor substrate and the first II-VI semiconductor layer; wherein the first II-VI semiconductor layer is adapted to limit the migration of indium from the III-V semiconductor substrate to the second II-VI semiconductor layer, and the first II-VI semiconductor layer includes an n-type dopant in an amount effective to deplete indium that has migrated from the III-V semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification