X-Y address type solid state image pickup device and method of producing the same
First Claim
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1. An imaging device comprising:
- a semiconductor layer, a first surface of the semiconductor layer being opposite to a second surface of the semiconductor layer;
wirings in an insulator layer, said insulator layer touching said first surface;
a back side layer of a first conductivity type at said second surface, said back side layer being between a photo-electric conversion region of a second conductivity type and a micro-lens;
a photo-diode layer of the first conductivity type at said first surface, an accumulating region of the second conductivity type being between said photo-electric conversion region and said photo-diode layer;
a channel region of the first conductivity type between a floating diffusion of the second conductivity type and said photo-diode layer, said accumulating region and said floating diffusion touching said channel region;
a well region of the first conductivity type extending from said back side layer to said insulator layer, said photo-electric conversion region touching said back side layer and said well region,wherein said well region is between said micro-lens and a first layer of the wirings, said first layer of the wirings being between said photo-electric conversion region and a second layer of the wirings.
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Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
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Citations
24 Claims
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1. An imaging device comprising:
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a semiconductor layer, a first surface of the semiconductor layer being opposite to a second surface of the semiconductor layer; wirings in an insulator layer, said insulator layer touching said first surface; a back side layer of a first conductivity type at said second surface, said back side layer being between a photo-electric conversion region of a second conductivity type and a micro-lens; a photo-diode layer of the first conductivity type at said first surface, an accumulating region of the second conductivity type being between said photo-electric conversion region and said photo-diode layer; a channel region of the first conductivity type between a floating diffusion of the second conductivity type and said photo-diode layer, said accumulating region and said floating diffusion touching said channel region; a well region of the first conductivity type extending from said back side layer to said insulator layer, said photo-electric conversion region touching said back side layer and said well region, wherein said well region is between said micro-lens and a first layer of the wirings, said first layer of the wirings being between said photo-electric conversion region and a second layer of the wirings. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification