Display device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer so that a thickness of the oxide semiconductor layer is greater than or equal to 15 nm and less than or equal to 50 nm;
forming a conductive layer overlapping a first portion of the oxide semiconductor layer;
forming an inorganic insulating layer over and in contact with a second portion of the oxide semiconductor layer; and
performing a heat treatment on the inorganic insulating layer so that oxygen in the inorganic insulating layer is supplied to the second portion of the oxide semiconductor layer,wherein the first portion of the oxide semiconductor layer comprises a first region and a second region,wherein the first region is in contact with the conductive layer,wherein the second region is not in contact with the conductive layer, andwherein a conductivity of the first region is higher than a conductivity of the second region.
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Abstract
An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
161 Citations
19 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer so that a thickness of the oxide semiconductor layer is greater than or equal to 15 nm and less than or equal to 50 nm; forming a conductive layer overlapping a first portion of the oxide semiconductor layer; forming an inorganic insulating layer over and in contact with a second portion of the oxide semiconductor layer; and performing a heat treatment on the inorganic insulating layer so that oxygen in the inorganic insulating layer is supplied to the second portion of the oxide semiconductor layer, wherein the first portion of the oxide semiconductor layer comprises a first region and a second region, wherein the first region is in contact with the conductive layer, wherein the second region is not in contact with the conductive layer, and wherein a conductivity of the first region is higher than a conductivity of the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer so that a thickness of the oxide semiconductor layer is greater than or equal to 15 nm and less than or equal to 50 nm; performing a first heat treatment on the oxide semiconductor layer; forming a conductive layer overlapping a first portion of the oxide semiconductor layer; forming an inorganic insulating layer over and in contact with a second portion of the oxide semiconductor layer; and performing a second heat treatment on the inorganic insulating layer so that oxygen in the inorganic insulating layer is supplied to the second portion of the oxide semiconductor layer, wherein the first portion of the oxide semiconductor layer comprises a first region and a second region, wherein the first region is in contact with the conductive layer, wherein the second region is not in contact with the conductive layer, and wherein a conductivity of the first region is higher than a conductivity of the second region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification