Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
First Claim
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1. A magnetoresistance element comprising:
- a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body; and
a heat assist layer that heats the first magnetic body with heat generated based on a current flowing through the magnetic tunnel junction portion;
the first magnetic body having a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface; and
the magnetization direction of the first magnetic body being reversed by the heating of the first magnetic body.
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Abstract
A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.
16 Citations
11 Claims
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1. A magnetoresistance element comprising:
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a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body; and a heat assist layer that heats the first magnetic body with heat generated based on a current flowing through the magnetic tunnel junction portion; the first magnetic body having a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface; and the magnetization direction of the first magnetic body being reversed by the heating of the first magnetic body. - View Dependent Claims (2, 3, 4, 5)
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6. A magnetoresistance element comprising:
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a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body; and a heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion; the second magnetic body having a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface; and the magnetization direction of the second magnetic body being reversed by the heating of the second magnetic body. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification