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Flash multiple-pass write with accurate first-pass write

  • US 8,995,199 B2
  • Filed: 09/05/2014
  • Issued: 03/31/2015
  • Est. Priority Date: 04/04/2011
  • Status: Active Grant
First Claim
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1. A method for controlling a Flash memory, comprising:

  • receiving, at a Flash controller, an instruction to write to a location in the Flash memory;

    determining, at the Flash controller, if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and

    in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction;

    performing an accurate coarse write on the location, including by configuring the level placement setting to be a first value; and

    after the accurate coarse write is performed on the location, performing a fine write on the location, including by configuring the level placement setting to be a second value.

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