Flash multiple-pass write with accurate first-pass write
First Claim
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1. A method for controlling a Flash memory, comprising:
- receiving, at a Flash controller, an instruction to write to a location in the Flash memory;
determining, at the Flash controller, if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and
in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction;
performing an accurate coarse write on the location, including by configuring the level placement setting to be a first value; and
after the accurate coarse write is performed on the location, performing a fine write on the location, including by configuring the level placement setting to be a second value.
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Abstract
An instruction to write to a location in the Flash memory is received. It is determining if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level. In the event it is determined that the Flash memory exposes a level placement setting, an accurate coarse write is performed on the location, including by configuring the level placement setting to be a first value, and after the accurate coarse write is performed on the location, a fine write is performed on the location, including by configuring the level placement setting to be a second value, in response to receiving the instruction.
1 Citation
20 Claims
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1. A method for controlling a Flash memory, comprising:
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receiving, at a Flash controller, an instruction to write to a location in the Flash memory; determining, at the Flash controller, if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction; performing an accurate coarse write on the location, including by configuring the level placement setting to be a first value; and after the accurate coarse write is performed on the location, performing a fine write on the location, including by configuring the level placement setting to be a second value. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A system for controlling a Flash memory, comprising:
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a Flash controller configured to; receive an instruction to write to a location in the Flash memory; determine if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction; perform an accurate coarse write on the location, including by configuring the level placement setting to be a first value; and after the accurate coarse write is performed on the location, perform a fine write on the location, including by configuring the level placement setting to be a second value; and the Flash memory. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A computer program product for controlling a Flash memory, the computer program product being embodied in a non-transitory computer readable storage medium and comprising computer instructions for:
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receiving an instruction to write to a location in the Flash memory; determining if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction; performing an accurate coarse write on the location, including by configuring the level placement setting to be a first value; and after the accurate coarse write is performed on the location, performing a fine write on the location, including by configuring the level placement setting to be a second value. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification