Composite RF current attenuator for a medical lead

• US 8,996,126 B2
• Filed: 02/21/2012
• Issued: 03/31/2015
• Est. Priority Date: 02/04/2009
• Status: Expired due to Fees

• Current Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Original Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Inventors: Stevenson, Robert A., Johnson, Robert Shawn, Kondabatni, Kishore Kumar, Spaulding, Joseph, Frustaci, Dominick J., Dabney, Warren S., Moschiano, Holly Noelle
• Primary Examiner(s): Koharski, Christopher D
• Assistant Examiner(s): CAREY, MICHAEL JAMES
• Application Number:
  US13/401,608
• Publication Number:
  US 20120253340A1
• Time in Patent Office: 1,134 Days
• Field of Search: 607/63, 607/115, 607/119
• US Class Current: 607/63
• CPC Class Codes: A61B 18/1492 having a flexible, catheter-like structure, e.g. for heart ablation A61B18/1477 takes precedence
• CPC Class Codes: A61B 2018/00839 Bioelectrical parameters, e.g. ECG, EEG
• CPC Class Codes: A61B 2090/374 NMR or MRI
• CPC Class Codes: A61B 2562/182 Electrical shielding, e.g. using a Faraday cage
• CPC Class Codes: A61B 2562/222 Electrical cables or leads therefor, e.g. coaxial cables or ribbon cables
• CPC Class Codes: A61B 2562/227 Sensors with electrical connectors
• CPC Class Codes: A61B 5/055 involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• CPC Class Codes: A61B 5/283 Invasive
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/086 Magnetic resonance imaging [MRI] compatible leads
• CPC Class Codes: A61N 1/3718 Monitoring of or protection against external electromagnetic fields or currents
• CPC Class Codes: H03H 1/0007 of radio frequency interference filters
• CPC Class Codes: H03H 2001/0021 Constructional details
• CPC Class Codes: H03H 2007/013 Notch or bandstop filters
• CPC Class Codes: H03H 7/0123 comprising distributed impedance elements together with lumped impedance elements

Abstract

A composite RF current attenuator for a medical lead includes a conductor having a distal electrode contactable to biological cells, a bandstop filter in series with the lead conductor for attenuating RF currents flow through the lead conductor at a selected center frequency or across a range of frequencies about the center frequency, and a lowpass filter in series with the bandstop filter and forming a portion of the lead conductor. The bandstop filter has a capacitance in parallel with a first inductance. In a preferred form, the lowpass filter includes a second inductance in series with the bandstop filter, wherein the values of capacitance and inductances for the composite RF current attenuator are selected such that it attenuates MRI-induced RF current flow in an MRI environment.

Claims

1. An implantable device, comprising:

a) at least one lead conductor having a length extending from a proximal conductor end to a distal conductor portion having a distal conductor end, wherein the proximal conductor end is electrically connectable to an active implantable medical device;

b) at least one electrode electrically connected to the distal conductor portion or the distal conductor end, wherein the electrode is contactable with biological cells; and

c) at least one self-resonant inductor comprising at least a portion of the lead conductor formed as a coiled inductor;

d) a first dielectric material coating the lead conductor forming the self-resonant inductor having a parasitic capacitance between adjacent turns of the coiled inductor to thereby provide an equivalent circuit comprising a first inductance in parallel with a capacitance so that the self-resonant inductor has a resonant impedance centered at an MRI RF pulse frequency or across a range of frequencies about the center frequency;

e) at least one second non-resonant inductance of at least 100 nanohenries electrically connected in series with the self-resonant inductor along the length of the lead conductor, wherein the second inductance is non-resonant at or near the MRI RF pulsed frequency; and

f) a second dielectric material coating the second inductance,

g) wherein at least the first dielectric material adhesively attaches together adjacent coils comprising the self-resonant inductor so that a resulting resonant impedance remains stable.

2. The implantable device of claim 1, wherein an inductance resistance and a capacitance resistance of the self-resonant inductor provide an overall Q so that the resultant 3-dB bandwidth is at least 100 kHz.

3. The implantable device of claim 1, wherein an inductance resistance and a capacitance resistance of the self-resonant inductor provide an overall Q so that the resultant 3-dB bandwidth is at least 0.5 MHz.

4. The implantable device of claim 1, wherein the at least one second inductance comprises a plurality of second inductances provided at spaced locations along the at least one lead conductor.

5. The implantable device of claim 1, wherein the at least one second inductance is equal to or greater than 300 nanohenries.

33. The implantable lead of claim 1, wherein the at least one second inductance is non-resonant at or near an MRI RF pulsed frequency.

34. The implantable lead of claim 1, wherein the at least one second inductance comprises a plurality of second inductances provided at spaced location along the at least one lead conductor.

35. The implantable lead of claim 1, wherein the at least one self-resonant inductor is wrapped around a mandrel comprising a lumen extending from a proximal mandrel end to distal mandrel end.

52. The implantable device of claim 1 wherein the first and second dielectric materials are the same or different.

53. The implantable device of claim 1 wherein the second dielectric material also adhesively attach together adjacent coils forming the second inductance.

54. The implantable device of claim 53, wherein the at least one second inductance is non-resonant at or near an MRI RF pulsed frequency.

6. An implantable device, comprising:

a) at least one lead conductor having a length extending from a proximal conductor end to a distal conductor portion having a distal conductor end, wherein the proximal conductor end is electrically connectable to an active implantable medical device;

b) at least one electrode electrically connected to the distal, conductor portion or the distal conductor end, wherein the electrode is contactable with biological cells; and

c) at least one self-resonant inductor comprising at least a portion of the lead conductor formed as a coiled inductor;

d) a first dielectric material coating the lead conductor forming the self-resonant inductor, wherein the self-resonant inductor has a parasitic capacitance between adjacent turns of the coiled inductor to thereby provide an equivalent circuit comprising a first inductance in parallel with a capacitance so that the self-resonant inductor has a resonant impedance of at least 500 ohms centered at an MRI RF pulse frequency or across a range of frequencies about the center frequency; and

e) at least one low pass filter connected in series along the length of the lead conductor, wherein the low pass filter comprises at least one inductor is series with the conductor and wherein the at least one inductor has a second inductance of at least 100 nanohenries,

f) wherein at least the first dielectric material adhesively attaches together adjacent coils comprising the self-resonant inductor so that the resonant impedance remains stable.

7. The implantable device of claim 6, wherein the at least one low pass filter is selected from the group consisting of a single element inductor, an L filter, a T filter, a Pi filter, an LL filter, and an “

n”

element filter.

8. The implantable device of claim 6, wherein the at least one inductor of the low pass filter is selected from the group consisting of a discrete passive inductor, an inductor chip, an inductor winding, an inductor meander, a spiral inductor, and an inductor trace.

9. The implantable device of claim 6, wherein an inductance resistance and a capacitance resistance of the at least one self-resonant inductor provide an overall Q so that the resultant 3-dB bandwidth is at least 100 kHz.

10. The implantable device of claim 6, wherein an inductance resistance and a capacitance resistance of the at least one self-resonant inductor provide an overall Q so that the resultant 3-dB bandwidth is at least 0.5 MHz.

36. The implantable lead of claim 6, wherein the at least one inductor of the low pass filter is non-resonant at or near an MRI RF pulsed frequency.

11. An implantable lead comprising a lead length extending axially from a proximal lead end to a distal lead portion having a distal lead end, wherein the proximal lead end is configured to be permanently or removably connectable to electronic circuits of an active implantable medical device, the implantable lead comprising

a) at least a first electrode contactable with biological cells, wherein the first electrode is disposed axially along the lead length at or near the distal lead end;

b) at least a first conductor extending from an electrical connection at the first electrode to or adjacent to the proximal lead end;

c) at least a second electrode contactable with biological cells, wherein the second electrode is disposed axially along the lead length at or near the distal lead portion and axially proximal the first electrode;

at least a second conductor electrically insulated from the first conductor and extending from an electrical connection at the second electrode to or adjacent to the proximal lead end;

e) a first self-resonant inductor comprising at least portion of the first conductor formed as a first coiled inductor;

f) a first dielectric material coating the lead conductor forming the first self-resonant inductor, wherein the first self-resonant inductor has a first parasitic capacitance between adjacent turns of the first coiled inductor to thereby provide an equivalent circuit comprising a first inductance in parallel with a first capacitance so that the first self-resonant inductor has a first resonant impedance of at least 500 ohms centered at an MRI RF pulsed frequency or across a range of frequencies about the center frequency, and wherein the first self-resonant inductor is disposed axially along the lead length between the first and second electrodes;

g) a second self-resonant inductor comprising at least a portion of the second conductor formed as a second coiled inductor;

h) a second dielectric material coating the lead conductor forming the second self-resonant inductor, wherein the second self-resonant inductor has a second parasitic capacitance between adjacent turns of the second coiled inductor to thereby provide an equivalent circuit comprising a second inductance in parallel with a second capacitance so that the second self-resonant inductor has a second resonant impedance of at least 500 ohms centered at an MRI RF pulse frequency or across a range of frequencies about the center equency, and wherein the second self-resonant inductor is disposed axially along the lead length between the second electrode and the proximal end of the implantable lead;

i) a third inductance of at least 100 nanohenries electrically coupled in series along the first conductor and disposed axially along the lead length between the first and second electrodes;

j) a third dielectric material coating the second inductance;

k) a fourth inductance of at least 100 nanohenries electrically coupled in series along the second conductor and disposed axially along the lead length between the second electrode and the proximal end of the implantable lead;

l) a fourth dielectric material coating the fourth inductance,

m) wherein at least the first and second dielectric materials adhesively attach together adjacent coils forming the first and second self-resonant inductors so that the first and second resonant impedances remain stable.

12. The implantable lead of claim 11, wherein the third and fourth inductances are non-resonant at or near the MRI RF pulsed frequency.

13. The implantable lead of claim 11, wherein the first and second self-resonant inductors each comprise an overall circuit Q, wherein a resultant 3-dB bandwidth comprises at least 100 kHz.

14. The implantable lead of claim 11, wherein the first and second self-resonant inductors each comprise an overall circuit Q, wherein a resultant 3-dB bandwidth comprises at least 0.5 MHz.

15. The implantable lead of claim 11, wherein the first and second self-resonant inductors each comprise an overall circuit Q, wherein, a resultant 3-dB bandwidth comprises at least 10 MHz.

16. The implantable lead of claim 11, as a transvenous cardiac lead and the first electrode comprises an active fixation tip electrode.

17. The implantable lead of claim 16, as a transvenous cardiac lead and the second electrode comprises a ring electrode.

18. The implantable lead of claim 11, as a transvenous cardiac lead and the first electrode comprises a passive tip electrode including fixation tines.

19. The implantable lead of claim 18, wherein the second electrode comprises a ring electrode.

37. The implantable lead of claim 11, wherein the third and fourth inductances are non-resonant at or near an MRI RF pulsed frequency.

38. The implantable lead of claim 11, wherein the first and second self-resonant inductors are wrapped around respective mandrels, each mandrel comprising a lumen extending from a proximal mandrel end to a distal mandrel end.

55. The implantable device of claim 11 wherein the third and fourth dielectric materials also adhesively attach together adjacent coils forming the third and fourth inductances.

20. An implantable lead comprising a lead length extending axially from a proximal lead end to a distal lead portion having a distal lead end, wherein the proximal lead end is configured to be permanently or removably connectable to electronic circuits of an active implantable medical device, the implantable lead comprising:

a) at least a first electrode contactable with biological cells, wherein the first electrode is disposed axially along the lead length at or near the distal lead end;

b) at least a first conductor extending from an electrical connection at the first electrode to or adjacent to the proximal lead end;

c) at least a second electrode contactable with biological cells, wherein the second electrode is disposed axially along the lead length at or near the distal lead portion and axially proximal the first electrode;

d) at least a second conductor electrically insulated from the first conductor and extending from an electrical connection at the second electrode to or adjacent to the proximal lead end;

e) a first self-resonant inductor comprising a portion of the first conductor formed as a first coiled inductor;

f) a first dielectric material coating the lead conductor forming the first self-resonant inductor, wherein a first inductance is formed by the first coiled inductor, and wherein a first capacitance comprises a first parasitic capacitance between adjacent turns of the first coiled inductor so that the first self-resonant inductor has a first resonant impedance of at. least 500 ohms centered at an MRI RF pulse frequency or across a range of frequencies about the center frequency, and wherein the first self-resonant inductor is disposed axially along the lead length between the first and second electrodes;

g) a second self-resonant inductor comprising a portion of the second conductor formed as a second coiled inductor;

h) a second dielectric material coating the lead conductor forming the second self-resonant inductor, wherein a second inductance is formed by the second coiled inductor, and wherein a second capacitance comprises a second parasitic capacitance between adjacent turns of the second coiled inductor so that the second self-resonant inductor has a second resonant impedance of at least 500 ohms centered at an MRI RF pulse frequency or across a range of frequencies about the center frequency, wherein the second self-resonant inductor is disposed axially along the lead length between the second electrode and the proximal end of the implantable lead;

i) a third inductance of at least 100 nanohenries and which is non-resonant at or near the MRI RF pulsed frequency, wherein the third inductance is electrically coupled in series along the first conductor and disposed axially along the lead length between the first and second electrodes; and

j)a fourth inductance of at least 100 nanohenries and which is non-resonant at or near the MRI RF pulsed frequency, wherein the fourth inductance is electrically coupled in series along the second conductor and disposed axially along the lead length between the second electrode and the proximal end of the implantable lead,

k) wherein the first and second dielectric materials adhesively attach together adjacent coils forming the first and second self-resonant inductors so that the first and second resonant impedances remain stable.

21. The implantable lead of claim 20, wherein the first electrode comprises an active fixation tip electrode or a passive tip electrode including fixation tines.

22. The implantable lead of claim 20, wherein the second electrode comprises a ring electrode.

23. The lead of claim 20, wherein the first and second electrodes each comprise ring electrodes.

24. The implantable lead of claim 23, wherein the first and second self-resonant inductors have respective inductance resistances and capacitance resistances to provide an overall Q for each self-resonant inductor, wherein a resultant 3-dB bandwidth comprises at least 100 kHz.

25. The implantable lead of claim 24, wherein the resultant 3-dB bandwidth for each of the first and second self-resonant inductors is at least 0.5 MHz.

26. The implantable lead of claim 24, wherein the resultant 3-dB bandwidth for each of the first and second self-resonant inductors is at least 10 MHz.

39. The implantable lead of claim 20, wherein the third and fourth inductances are non-resonant at or near an MRI RF pulsed frequency.

40. The implantable lead of claim 20, wherein the first and second self-resonant inductors are wrapped around respective mandrels, each mandrel comprising a lumen extending from a proximal mandrel end to a distal mandrel end.

27. An implantable lead comprising a lead length extending axially from a proximal lead end to a distal lead portion having a distal lead end, wherein the proximal lead end is configured to be permanently or removably connectable to electronic circuits of an active implantable medical device, the implantable lead comprising:

a) at least a first electrode contactable with biological cells, wherein the first electrode is disposed axially along the lead length at or near the distal lead end;

b) at least a first conductor extending from an electrical connection at the first electrode to or adjacent to the proximal lead end;

c) at least a second electrode contactable with biological cells, wherein the second electrode is disposed axially along the lead length at or near the distal lead portion and axially proximal the first electrode;

d) at least a second conductor electrically insulated from the first conductor and extending from an electrical connection at the second electrode to adjacent to the proximal lead end;

e) a first composite filter circuit comprising at least two coiled portions of the first conductor, the at least two coiled portions comprising a first spacing portion having a larger spacing between adjacent turns as compared to a second spacing portion;

f) wherein the first spacing portion comprises a first non -resonant inductance of at least 100 nanohenries and the second spacing portion provides a second self-resonant inductor, and wherein the first inductance is non-resonant at or near an MRI RF pulsed frequency; and

g) a first dielectric material coating the first composite filter, wherein the second self-resonant inductor has a parasitic capacitance formed between the adjacent turns of the coiled conductor to thereby provide a resonant impedance of at least 500 ohms centered at the MRI RF pulsed frequency or across a range of frequencies about the center frequency; and

h) a second composite filter circuit comprising at least two portions of the second conductor, the at least two coiled portions comprising a third spacing portion having a larger spacing between adjacent turns as compared to a fourth spacing portion;

i)wherein the third spacing portion comprises a third non-resonant inductance of at least 100 nanohenries and the fourth spacing portion provides a fourth self-resonant inductor, and wherein the third inductance is non-resonant at or near the MRI RF pulsed frequency; and

j) a second dielectric material coating the second composite filter, wherein the fourth self-resonant inductor has a parasitic capacitance formed between the adjacent turns of the second coiled conductor along the fourth spacing portion to thereby provide fourth resonant impedance of at least 500 ohms centered at the MRI RF pulsed frequency or across a range of frequencies about the center frequency,

k) wherein at least the first and second dielectric materials adhesively attach together adjacent coils forming the second and fourth self-resonant inductors so that the second and fourth resonant impedances remain stable.

41. The implantable lead of claim 27, wherein the first and third inductances are non-resonant at or near an MRI RF pulsed frequency.

42. The .implantable lead of claim 27, wherein the second and fourth self-resonant inductors are wrapped around respective mandrels, each mandrel comprising a lumen extending from a proximal mandrel end to a distal mandrel end.

56. The implantable device of claim 27 wherein the first and second dielectric materials also adhesively attach together adjacent coils forming the first and second non-resonant inductances.

28. An implantable lead comprising a lead length extending axially from a proximal lead end to a distal lead portion having a distal lead end, wherein proximal the end lead is configured to be permanently or removably connectable to electronic circuits of an active implantable medical device (AIMD), the implantable lead comprising:

a) at least a first electrode contactable with biological cells, wherein the first electrode is disposed axially along the lead length at or near the distal lead end;

b) at least a first conductor extending from an electrical connection at the first electrode or adjacent to the proximal lead end;

c) at least a second electrode contactable with biological cells, wherein the second electrode is disposed axially along the lead length at the distal lead portion and axially proximal the first electrode;

d) at least a second conductor electrically insulated from the first conductor and extending from an electrical connection at the second electrode to or adjacent to the proximal lead end;

e) a first self-resonant inductor comprising a portion of the first conductor formed as a first coiled inductor;

f) a first dielectric material coating the first lead conductor forming the first self-resonant inductor, wherein a first inductance is formed by the first coiled inductor, and wherein a first capacitance comprises a first parasitic capacitance between adjacent turns of the first coiled inductor so that the first self-resonant inductor has a first resonant impedance of at least 500 ohms centered at an MRI RF pulsed frequency or across a range of frequencies about the center frequency, wherein the first self-resonant inductor is disposed axially along the lead length between the first and second electrodes;

g) a second self-resonant inductor comprising a portion of the second conductor formed as a second coiled inductor;

h) a second dielectric material coating the second lead conductor forming the second self-resonant inductor, wherein a second inductance is formed by the second coiled inductor, and wherein a second capacitance comprises a second parasitic capacitance between adjacent turns of the second coiled inductor so that the second self-resonant inductor has a second resonant impedance of at least 500 ohms centered at the MRI RF pulsed frequency or across a range of frequencies about the center frequency, wherein the second self-resonant inductor is disposed axially along the lead length between the second electrode and the proximal end of the implantable lead;

i) a first plurality of non-resonant inductors, each of at least 100 nanohenries and electrically coupled in series along the first conductor, wherein the first plurality of inductors are non-resonant at or near the MRI RF pulsed frequency; and

j) a second plurality of non-resonant inductors, each of at least 100 nanohenries and electrically coupled in series along the second conductor, wherein the second plurality of inductors are non-resonant at or near the MRI RF pulsed frequency;

k) wherein the first and second plurality of inductors are staggered in linear relation along the respective first and second conductors so that the first and second plurality of inductors are disposed between each other along the axial lead length so that the staggering prevents the first plurality of inductors from electrically interfering with the second plurality of inductors,

l) wherein the first and second dielectric materials adhesively attach together adjacent coils forming the first and second self-resonant inductors so that the first and second resonant impedances remain stable.

29. The implantable lead of claim 28, wherein the first and second self-resonant inductors are staggered in linear relation to each other along the axial lead length so that they are not adjacently disposed.

43. The implantable lead of claim 28, wherein the first and second plurality of inductors are non-resonant at or near an MRI RF pulsed frequency.

57. The implantable device of claim 28 wherein the first and second dielectric materials also adhesively attach together adjacent coils forming the first and second plurality of non-resonant inductances.

30. An implantable lead comprising a lead length extending axially from a proximal lead end to a distal lead portion having a distal lead end, wherein the proximal lead end is configured to be permanently or removably connectable to electronic circuits of an active implantable medical device, the implantable lead comprising:

a) at least a first electrode contactable with biological cells, wherein the first electrode is disposed along the axial lead length at or near the distal lead end;

b) at least a first conductor extending from an electrical connection at the first electrode to or adjacent to the proximal lead end;

c) at least a second electrode contactable with biological cells, wherein the second electrode is disposed axially along the lead length at or near the distal lead portion and axially proximal the first electrode;

d) at least a second conductor electrically insulated from the first conductor and extending from an electrical connection at the second electrode to or adjacent to the proximal lead end;

e) a first set of non-resonant inductors comprising at least two inductors, each of at least 100 nanohenries and being electrically coupled in series along the first conductor, wherein the first set of inductors are non-resonant at or near an MRI RF pulsed frequency; and

f) a first self-resonant inductor comprising a portion of the first conductor formed as a first coiled inductor;

g) a first dielectric material coating the lead conductor forming the first self-resonant inductor, wherein a first inductance is formed by the first coiled inductor, and wherein a first capacitance comprises a first parasitic capacitance between adjacent turns of the first coiled inductor so that the first self-resonant inductor has a first resonant impedance of at least 500 ohms centered at the MRI RF pulsed frequency or across a range of frequencies about the center frequency, wherein the first self-resonant inductor is disposed axially along the lead length between the first and second electrodes;

h) a second self-resonant inductor comprising a portion of the second conductor formed as a second coiled inductor;

i) a second dielectric material coati the lead conductor forming the second self-resonant inductor, wherein a second inductance is formed by the second coiled inductor, and wherein a second capacitance comprises a second parasitic capacitance between adjacent turns of the second coiled inductor so that the second self-resonant inductor has a second resonant impedance of at least 500 ohms centered at the MRI RF pulsed frequency or across a range of frequencies about the center frequency, wherein the second self-resonant. inductor is disposed axially along the lead length between the second electrode and the proximal end of the implantable lead;

j) a second set of non-resonant inductors comprising at least two inductors, each of at least 100 nanohenries and being electrically coupled in series along the second conductor, wherein the second set of inductors are non-resonant at or near an MRI RF pulsed frequency;

k) wherein any inductor of the at least two inductors of the first set of inductors are never adjacently disposed along the axial lead length next to any inductor of the at least two inductors of the second set of inductors so that the first and second sets of inductors are prevented from electrically interfering with each other,

l) wherein the first and second dielectric materials adhesively attach together adjacent coils forming the first and second self-resonant inductors so that the first and second resonant impedances remain stable.

31. The implantable lead of claim 30, wherein the at least two inductors of the first set of inductors and the at least two inductors of the second set of inductors are non-resonant at or near an MRI RF pulsed frequency.

32. The implantable lead of claim 30, wherein the at least two inductors of the first set of inductors and the at least two inductors of the second set of inductors are wrapped around respective mandrels, each mandrel comprising a lumen extending from a proximal mandrel end to a distal mandrel end.

58. The implantable device of claim 30 wherein the first and second dielectric materials also adhesively attach together adjacent coils forming the first and second set of non-resonant inductors.

44. An implantable lead, probe or catheter, comprising:

a) at least one conductor extending from a proximal conductor end to a distal conductor portion having a distal conductor end;

b) at least one self-resonant inductor comprising at least a portion of the lead conductor formed as a coiled inductor;

c) a first dielectric material coating the lead conductor forming the at least one self-resonant inductor;

d) at least one electrode electrically connected to the lead conductor at the distal conductor portion or the distal conductor end, wherein the electrode is configured for placement in contact with biological cells; and

e) at least one second inductance of at least 100 nanohenries electrically connected in series along the length of the lead conductor, wherein the second inductance is non-resonant at or near an MRI RF pulsed frequency,

f) wherein the self-resonant inductor has a parasitic capacitance between adjacent turns of the coiled inductor to thereby provide an equivalent circuit comprising an inductance in parallel with a capacitance so that the self-resonant inductor has a resonant impedance of at least 500 ohms centered at the MRI RF pulsed frequency or across a range of frequencies about the center frequency,

g) wherein the parasitic capacitance provides a capacitor series resistance R_c and the self-resonant inductor has an inductance and an inductor series resistance R_L, wherein at low frequencies of about 10 Hz to about 1 kHz an inductor reactance and the inductor series resistance permit passage of biological signals, and wherein at the low frequencies of about 10 Hz to about 1 kHz, a capacitor reactance and the capacitor series resistance substantially act as an open circuit to the same biological signals that the self-resonant inductor allows to pass, and

h) wherein the self-resonant inductor has an overall circuit Q so that the resultant 3-dB bandwidth is at least 100 kHz, and

i) wherein at least the first dielectric material adhesively attach together adjacent coils forming the first self-resonant inductor so that the first resonant impedance remains stable.

45. The implantable lead, probe or catheter of claim 44, wherein the at least one second inductance comprises a plurality of second inductances provided at spaced location along the at least one lead conductor.

46. The implantable lead, probe or catheter of claim 44, wherein the at least one second inductance is equal to or greater than 300 nanohenries.

47. The implantable lead, probe or catheter of claim 44, wherein the at least one electrode is selected from an active fixation tip electrode, a passive tip electrode including fixation tines, and a ring electrode.

48. The implantable lead, probe or catheter of claim 44, wherein the coiled inductor contacted with the dielectric material is wrapped around a mandrel.

49. The implantable lead, probe or catheter of claim 48, wherein the mandrel comprises a lumen extending from a proximal mandrel end to a distal mandrel end.

50. The implantable lead, probe or catheter of claim 49, wherein the proximal and distal mandrel ends are electrically conductive.

51. The implantable lead, probe or catheter of claim 44 wherein there are at least two electrodes, one comprising an ablation electrode and the other comprising a sensing electrode.

59. The implantable device of claim 44 wherein the first and second dielectric materials also adhesively attach together adjacent coils forming the first and second non-resonant inductances.

60. An implantable device, comprising:

a) at least one lead conductor having a length extending from a proximal conductor end to a distal conductor portion having a distal conductor end, wherein the proximal conductor end is electrically connectable to an active implantable medical device;

b) at least one electrode electrically connected to the distal conductor portion or the distal conductor end, wherein the electrode is contactable with biological cells; and

c) at least one self-resonant inductor comprising at least a portion of the lead conductor formed as a coiled inductor;

d) first dielectric material coating the lead conductor forming the self-resonant inductor having a parasitic capacitance between adjacent turns of the coiled inductor to thereby provide an equivalent circuit comprising a first inductance in parallel with a capacitance so that the self-resonant inductor is resonant at or near an MRI RF pulsed frequency; and

e) at least one second inductance of at least 100 nanohenries electrically connected in series with the self-resonant inductor along the length of the lead conductor, wherein the second inductance is non-resonant at or near the MRI RF pulsed frequency; and

f) a second dielectric material coating the second inductance,

g) an adhesive contacting at least the first dielectric material to thereby adhesively attach together adjacent coils forming the self-resonant inductor so that the resonant impedance remains stable.

61. The implantable device of claim 60 wherein the adhesive contacts the second dielectric material to thereby adhesively attach together adjacent coils forming the second inductance so the second inductance remains stable.