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Ion implant system having grid assembly

  • US 8,997,688 B2
  • Filed: 01/31/2012
  • Issued: 04/07/2015
  • Est. Priority Date: 06/23/2009
  • Status: Active Grant
First Claim
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1. A plasma grid implantation system comprising:

  • a multi-stage differentially pumped system comprising;

    a plurality of stages, each with increasing level of vacuum leading to an implant stage having highest level of vacuum;

    a plurality of stages each with a decreasing level of vacuum leading away from the implant stage;

    a conveyor for transporting substrates to be implanted through the multi-stage differentially pumped system;

    a plasma implant system positioned at the implant stage, the plasma implant system comprising;

    a plasma source configured to provide plasma in a plasma region;

    a first grid plate comprising a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be positively biased by a power supply;

    a second grid plate comprising a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be negatively biased by a power supply;

    a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate; and

    ,a third grid plate disposed between the second grid plate and the substrate holder, the third grid plate comprising a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the second grid plate, the third grid plate being grounded; and

    ,wherein the first grid plate and the second grid plates are configured to accelerate ions from the plasma, the second grid plate is configured to suppress electrons that come off the substrate, and the third grid plate is configured to function as beam defining grid.

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