In-situ boron doped PDC element
First Claim
Patent Images
1. A polycrystalline diamond compact, comprising:
- a layer of polycrystalline diamond integrally formed in a high-temperature, high-pressure in-situ boron-doped process, the layer comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—
, Co—
or Fe—
, and boron powder, said boron-containing alloy having a melting temperature between about 960°
C. and about 1200°
C., said mixture being consolidated via liquid diffusion of boron into the diamond crystals at a pressure between about 5 Gpa and about 7 Gpa and at a temperature greater than 950°
C. and less than 1450°
C.
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Abstract
A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.
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Citations
21 Claims
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1. A polycrystalline diamond compact, comprising:
a layer of polycrystalline diamond integrally formed in a high-temperature, high-pressure in-situ boron-doped process, the layer comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—
, Co—
or Fe—
, and boron powder, said boron-containing alloy having a melting temperature between about 960°
C. and about 1200°
C., said mixture being consolidated via liquid diffusion of boron into the diamond crystals at a pressure between about 5 Gpa and about 7 Gpa and at a temperature greater than 950°
C. and less than 1450°
C.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An earth boring drill bit, comprising:
a polycrystalline diamond cutting element with a layer of polycrystalline diamond integrally formed in a high-temperature, high-pressure in-situ boron-doped process, the layer comprising an in-situ boron-doped polycrystalline diamond compact comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—
, Co—
or Fe—
, and boron powder, said boron-containing alloy having a melting temperature between about 960°
C. and about 1200°
C., said mixture being consolidated via liquid diffusion of boron into the diamond crystals at a pressure greater than 5 Gpa and less than 7 Gpa and at a temperature greater than 950°
C. and less than 1450°
C.
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12. A method for making an in-situ boron-doped polycrystalline diamond compact, comprising:
forming a layer of polycrystalline diamond integrally in a high-temperature, high-pressure in-situ boron-doped process comprising in-situ boron-doped polycrystalline diamond compact by consolidating a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—
, Co—
or Fe—
, and boron powder, said boron-containing alloy having a melting temperature between about 960°
C. and about 1200°
C., said mixture formed via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and less than 7 Gpa and at a temperature greater than 950°
C. and less than 1195°
C.- View Dependent Claims (13, 14, 15, 16, 17)
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18. A polycrystalline diamond cutting element, comprising:
a preform cutting element in a fixed cutter rotary drill bit, the preform cutting element having a body in a form of a circular tablet with a front facing table of polycrystalline diamond that is integrally formed with a substrate of less hard material and bonded on a generally cylindrical carrier, the preformed cutting element formed in a high-temperature, high-pressure in-situ boron-doped process, the tablet comprising an in-situ boron-doped formed polycrystalline diamond compact comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—
, Co—
or Fe—
, and boron powder, said boron-containing alloy having a melting temperature between about 960°
C. and about 1200°
C., said mixture consolidated via liquid diffusion of boron into diamond crystals at a pressure between about 5 Gpa and about 7 Gpa and at a temperature greater than 950°
C. and less than 1450°
C.- View Dependent Claims (19, 20, 21)
Specification