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In-situ boron doped PDC element

  • US 8,997,900 B2
  • Filed: 12/15/2010
  • Issued: 04/07/2015
  • Est. Priority Date: 12/15/2010
  • Status: Active Grant
First Claim
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1. A polycrystalline diamond compact, comprising:

  • a layer of polycrystalline diamond integrally formed in a high-temperature, high-pressure in-situ boron-doped process, the layer comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—

    , Co—

    or Fe—

    , and boron powder, said boron-containing alloy having a melting temperature between about 960°

    C. and about 1200°

    C., said mixture being consolidated via liquid diffusion of boron into the diamond crystals at a pressure between about 5 Gpa and about 7 Gpa and at a temperature greater than 950°

    C. and less than 1450°

    C.

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