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In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element

  • US 8,999,208 B2
  • Filed: 02/22/2011
  • Issued: 04/07/2015
  • Est. Priority Date: 02/24/2010
  • Status: Active Grant
First Claim
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1. An oxide sintered body comprising indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3), wherein the content of zinc element (Zn) is 10000 ppm or less:


  • 0.10≦

    In/(In+Ga+Sn)≦

    0.60 



    (1)
    0.30<

    Ga/(In+Ga+Sn)≦

    0.55 



    (2)
    0.0001<

    Sn/(In+Ga+Sn)≦

    0.30 



    (3).

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