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Method and structure of monolithically integrated ESD supperssion device

  • US 8,999,835 B2
  • Filed: 03/01/2012
  • Issued: 04/07/2015
  • Est. Priority Date: 07/28/2008
  • Status: Active Grant
First Claim
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1. A method for fabricating an electrostatic discharge device for an integrated circuit, the method comprising:

  • providing a semiconductor substrate;

    forming a voltage discharge region overlying an inner portion of the semiconductor substrate, the forming of the voltage discharged region comprising;

    forming a plurality of isolated conductive regions arranged as a vertical array, the array being numbered from 1 through N in a first direction and the array being numbered from 1 through M in a second direction;

    each of me conductive regions comprising an isolated tungsten plug;

    forming a dielectric material provided spatially around each of the isolated conductive regions to form a thickness of material having a surface region, wherein each of the conductive regions is physically separated from the other conductive regions by a portion of the dielectric material;

    forming an input region coupled to a first region of the plurality of conductive regions;

    forming an output region coupled to a second region of the plurality of conductive regions;

    forming an input line overlying a first region of the semiconductor substrate region and coupled to the input region of the plurality of conductive regions;

    forming an output line overlying a second region of the semiconductor substrate region and coupled to the output region of the plurality of conductive regions;

    further comprising coupling the output line to a ground potential; and

    wherein the dielectric material is selected from air, silicon dioxide, silicon nitride, and silicon oxynitride.

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