a-Si seasoning effect to improve SiN run-to-run uniformity

• US 8,999,847 B2
• Filed: 08/10/2011
• Issued: 04/07/2015
• Est. Priority Date: 08/16/2010
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Furuta, Gaku, Choi, Soo Young, Park, Beom Soo, Choi, Young-jin, Kenji, Omori
• Primary Examiner(s): Nguyen, Khiem D
• Application Number:
  US13/207,315
• Publication Number:
  US 20120040536A1
• Time in Patent Office: 1,336 Days
• Field of Search: 438/758, 438/778, 438/791, 438/643, 438/694, 438/703, 257/E21.17, 257/E21.293
• US Class Current: 438/703
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02299 pre-treatment

Abstract

Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

Claims

1. A method for depositing a nitrogen-containing material on a substrate, comprising:

performing a first chamber seasoning process by depositing a silicon nitride seasoning layer over a surface of a chamber component in a processing chamber without the substrate being present;

after the first chamber seasoning process, processing a first substrate within the processing chamber to deposit a nitrogen-containing material layer on the first substrate;

after the deposition of the nitrogen-containing material layer on the first substrate, performing a second chamber seasoning process without the substrate being present to deposit a conductive seasoning layer over the surface of the chamber component in the processing chamber;

after the second chamber seasoning process, processing a second substrate within the processing chamber to deposit a nitrogen-containing material layer on the second substrate; and

after the deposition of the nitrogen-containing material layer on the second substrate, performing a third chamber seasoning process to deposit a silicon nitride seasoning layer over the surface of the chamber component in the processing chamber without the substrate being present.

2. The method of claim 1, wherein the nitrogen-containing material comprises silicon nitride material.

3. The method of claim 1, wherein the conductive seasoning layer comprises amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, or doped silicon carbide.

4. The method of claim 1, wherein the substrate has a surface area of about 90,000 cm² or greater.

5. The method of claim 1, wherein the chamber component comprising a gas distribution plate fabricated from a bare aluminum without anodizing.

6. The method of claim 1, further comprising:

after processing the first substrate and before the second chamber seasoning process, performing a chamber cleaning process using an in-situ dry cleaning process or a remote plasma cleaning process.

7. A method for depositing a nitrogen-containing material on a substrate placed in a processing chamber, comprising:

seasoning a surface of a chamber component in a processing region of the processing chamber by depositing a silicon nitride seasoning layer over the surface of the chamber component without the substrate being present;

after seasoning the surface of the chamber component, processing a batch of substrates within the processing chamber using a plasma enhanced CVD (PECVD) technique, comprising;

depositing a nitrogen-containing material on 1^st substrate to N^th substrate by introducing a nitrogen-containing gas and a silicon-containing gas into the processing chamber;

seasoning the surface of the chamber component in the processing region of the processing chamber by depositing an amorphous silicon seasoning layer over the surface of the chamber component without the substrate being present; and

after seasoning the surface of the chamber component, depositing a nitrogen-containing material on N+1^th to N+N^th substrate by introducing a nitrogen-containing gas and a silicon-containing gas into the processing chamber; and

after the last substrate of the batch of substrates is deposited with the nitrogen-containing material, processing seasoning the surface of the chamber component in the processing region of the processing chamber by depositing a silicon nitride seasoning layer over the surface of the chamber component without the substrate being present.

8. The method of claim 7, wherein the nitrogen-containing material comprises silicon nitride material.

9. The method of claim 7, wherein the deposition of the amorphous silicon seasoning layer is performed after about every 3 substrates to about 6 substrates are done with the deposition of the nitrogen-containing material.

10. The method of claim 7, further comprising:

after processing the batch of substrates, performing a chamber cleaning process using an in-situ dry cleaning process or a remote plasma cleaning process.

11. The method of claim 7, wherein the chamber component comprises a gas distribution plate fabricated from a bare aluminum without anodizing.

12. The method of claim 7, wherein the substrate has a surface area of about 90,000 cm² or greater.

13. The method of claim 7, wherein the N is an integral number ranging between about 3 to about 12.

14. A method for depositing a nitrogen-containing material on a substrate in a processing chamber, comprising:

performing a first seasoning process to deposit a first seasoning layer comprising silicon nitride over a surface of a chamber component in the processing chamber without the substrate being present;

after the first seasoning process, processing a first batch of substrates within the processing chamber to deposit a nitrogen-containing material layer on a substrate from the first batch of substrates;

after a desired number of substrates have been deposited with the nitrogen-containing material layer, performing a second seasoning process to deposit a second seasoning layer comprising amorphous silicon over the surface of the chamber component in the processing chamber without the substrate being present;

after the second seasoning process, processing a second batch of substrates within the processing chamber to deposit a nitrogen-containing material layer on a substrate from the second batch of the substrates and after the deposition of the nitrogen-containing material layer on the substrate from the second batch of substrates, performing a third seasoning process to deposit a silicon nitride seasoning layer over the surface of the chamber component in the processing chamber without the substrate being present.

15. The method of claim 14, wherein the chamber component comprises a gas distribution plate fabricated from a bare aluminum without anodizing.

16. A method for depositing a nitrogen-containing material on a substrate placed in a processing chamber, comprising:

performing a first chamber seasoning process by depositing a silicon nitride seasoning layer over a surface of a chamber component in a processing region of the processing chamber without the substrate being present;

after the first chamber seasoning process, processing a batch of substrates within the processing chamber, comprising;

depositing a nitrogen-containing material layer on 1^st substrate to N^th substrate;

performing a second chamber seasoning process by depositing a conductive seasoning layer over the surface of the chamber component without the substrate being present; and

after the second chamber seasoning process, depositing a nitrogen-containing material layer on N+1^th to N+N^th substrate; and

after the last substrate of the batch of substrates is done with the nitrogen-containing material layer and has been removed from the processing chamber, performing a third chamber seasoning process without the substrate being present to deposit a silicon nitride seasoning layer over the surface of the chamber component in the processing chamber.

17. The method of claim 16, further comprising:

before the third chamber seasoning process, performing a chamber cleaning process using an in-situ dry cleaning process or a remote plasma cleaning process.