Semiconductor device and method of manufacturing same
First Claim
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1. A display device comprising:
- a single crystal semiconductor substrate;
a pixel portion comprising a plurality of pixels;
wherein each of the plurality of pixels comprises;
a transistor comprising a channel formation region;
a first insulating layer over the transistor;
a first electrode over the first insulating layer;
a second insulating layer covering a peripheral portion of the first electrode;
a layer comprising an organic material over the first electrode and the second insulating layer; and
a second electrode over the layer comprising the organic material,wherein a source or a drain of the transistor is electrically connected to the first electrode,wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region exposed from the second insulating layer,wherein the channel formation region is in the single crystal semiconductor substrate,wherein the channel formation region is surrounded by an element separation film which is on the single crystal semiconductor substrate, andwherein the first electrode overlaps the element separation film.
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Abstract
A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
166 Citations
29 Claims
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1. A display device comprising:
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a single crystal semiconductor substrate; a pixel portion comprising a plurality of pixels; wherein each of the plurality of pixels comprises; a transistor comprising a channel formation region; a first insulating layer over the transistor; a first electrode over the first insulating layer; a second insulating layer covering a peripheral portion of the first electrode; a layer comprising an organic material over the first electrode and the second insulating layer; and a second electrode over the layer comprising the organic material, wherein a source or a drain of the transistor is electrically connected to the first electrode, wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region exposed from the second insulating layer, wherein the channel formation region is in the single crystal semiconductor substrate, wherein the channel formation region is surrounded by an element separation film which is on the single crystal semiconductor substrate, and wherein the first electrode overlaps the element separation film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A display device comprising:
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a single crystal semiconductor substrate; a pixel portion comprising a plurality of pixels; wherein each of the plurality of pixels comprises; a transistor comprising a channel formation region; a first insulating layer over the transistor; a first electrode over the first insulating layer and having a depression portion; a second insulating layer covering the first electrode except the depression portion; a layer comprising an organic material over the first electrode and the second insulating layer; and a second electrode over the layer comprising the organic material, wherein the first electrode has a stacked structure of a layer containing titanium and a layer containing aluminum, wherein the layer containing aluminum is in contact with the layer comprising the organic material in the depression portion, wherein a source or a drain of the transistor is electrically connected to the first electrode, wherein the channel formation region is in the single crystal semiconductor substrate, wherein the channel formation region is surrounded by an element separation film which is on the single crystal semiconductor substrate, and wherein the first electrode overlaps the element separation film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A display device comprising:
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a single crystal semiconductor substrate; a pixel portion comprising a plurality of pixels; wherein each of the plurality of pixels comprises; a first transistor comprising a first channel formation region; a second transistor comprising a second channel formation region; a first insulating layer over the first transistor and the second transistor; a first electrode over the first insulating layer; a second insulating layer covering a peripheral portion of the first electrode; a layer comprising an organic material over the first electrode and the second insulating layer; and a second electrode over the layer comprising the organic material, wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region exposed from the second insulating layer, wherein a source or a drain of the first transistor is electrically connected to a gate of the second transistor, wherein a source or a drain of the second transistor is electrically connected to the first electrode, wherein an element separation film is provided between the first channel formation region and the second channel formation region, and wherein the first electrode overlaps the element separation film. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification