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Diode having vertical structure

  • US 9,000,468 B2
  • Filed: 07/25/2013
  • Issued: 04/07/2015
  • Est. Priority Date: 10/26/2001
  • Status: Expired due to Term
First Claim
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1. A light emitting device comprising:

  • an Al layer;

    an undoped GaN buffer layer on the Al layer;

    an n-GaN layer on the undoped GaN buffer layer;

    an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;

    a p-GaN layer on the active layer; and

    a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;

    wherein the undoped GaN buffer layer is thicker than the Al layer.

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