Compliant micro device transfer head
First Claim
1. A compliant transfer head array comprising:
- a base substrate;
an insulating layer on the base substrate;
a patterned device layer on the insulating layer, the patterned device layer comprising;
a trace interconnect integrally formed with an array of electrodes;
wherein each electrode includes a mesa structure protruding above the trace interconnect, and each electrode is deflectable toward the base substrate; and
a dielectric layer covering a top surface of each mesa structure.
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Abstract
A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.
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Citations
19 Claims
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1. A compliant transfer head array comprising:
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a base substrate; an insulating layer on the base substrate; a patterned device layer on the insulating layer, the patterned device layer comprising; a trace interconnect integrally formed with an array of electrodes; wherein each electrode includes a mesa structure protruding above the trace interconnect, and each electrode is deflectable toward the base substrate; and a dielectric layer covering a top surface of each mesa structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification