Varactor shunt switches with parallel capacitor architecture

• US 9,000,866 B2
• Filed: 06/26/2012
• Issued: 04/07/2015
• Est. Priority Date: 06/26/2012
• Status: Active Grant

• Current Assignee: University of Dayton
• Original Assignee: University of Dayton
• Inventors: Subramanyam, Guru
• Primary Examiner(s): TAKAOKA, DEAN O
• Application Number:
  US13/533,310
• Publication Number:
  US 20130342289A1
• Time in Patent Office: 1,015 Days
• Field of Search: 333/101, 333/103, 333/104, 333/108, 333/157, 333/24.C, 257/595, 257/601
• US Class Current: 333/157
• CPC Class Codes: H01L 27/0808 Varactor diodes
• CPC Class Codes: H01P 1/15 by semiconductor devices
• CPC Class Codes: H01P 3/003 Coplanar lines

Abstract

A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor.

Claims

1. A parallel-capacitor varactor shunt switch comprising:

a shunt layer;

a coplanar waveguide layer; and

a tunable thin-film dielectric layer that is interposed between the shunt layer and the signal layer and electrically isolates the shunt layer from the signal layer,

wherein;

the shunt layer comprises a first shunt-layer ground line, a second shunt-layer ground line parallel to the first shunt-layer ground line, and a plurality of parallel shunt lines that each electrically connect the first shunt-layer ground line and the second shunt-layer ground line;

the coplanar waveguide layer comprises a first coplanar waveguide ground line, a second coplanar waveguide ground line parallel to the first coplanar waveguide ground line, and a coplanar waveguide signal transmission line interposed between the first coplanar waveguide ground line and the second coplanar waveguide ground line;

the plurality of parallel shunt lines in the shunt layer are not parallel to the coplanar waveguide signal transmission line in the signal layer,

a plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the coplanar waveguide signal transmission line, each varactor area corresponding to an overlap of the coplanar waveguide signal transmission line with a respective shunt line; and

each respective shunt line and its corresponding varactor area defines a capacitor.

2. The parallel-capacitor varactor shunt switch of claim 1, wherein the plurality of parallel shunt lines comprises at least three parallel shunt lines.

3. The parallel-capacitor varactor shunt switch of claim 1, wherein the plurality of parallel shunt lines comprises at least four parallel shunt lines.

4. The parallel-capacitor varactor shunt switch of claim 1, wherein the plurality of parallel shunt lines comprises from 2 to 6 parallel shunt lines.

5. The parallel-capacitor varactor shunt switch of claim 1, further comprising an input port and an output port, the input port and the output port being connected to opposite ends of the coplanar waveguide signal transmission line.

6. The parallel-capacitor varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer is a nanostructured barium strontium titanate thin film dielectric layer.

7. The parallel-capacitor varactor shunt switch of claim 1, wherein the nanostructured barium strontium titanate thin film dielectric layer has an average grain size of from 30 nm to 100 nm.

8. The parallel-capacitor varactor shunt switch of claim 1, wherein the coplanar waveguide signal transmission line is parallel to both the first coplanar waveguide ground line and the second coplanar waveguide ground line.

9. The parallel-capacitor varactor shunt switch of claim 1, wherein the plurality of parallel shunt lines in the shunt layer are skew to the CPW signal transmission line and run in a direction perpendicular to the direction to the CPW signal transmission line.

10. The parallel-capacitor varactor shunt switch of claim 1 further comprising a substrate, herein the shunt layer is deposited on the substrate.

11. The parallel-capacitor varactor shunt switch of claim 7, wherein the shunt layer comprises a metal stack of gold and platinum deposited on the substrate.

12. The parallel-capacitor varactor shunt switch of claim 7, further comprising a titanium adhesion layer deposited on the substrate, the shunt layer being deposited on the titanium adhesion layer.

13. The parallel-capacitor varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer has an average grain size of from about 20 nm to about 30 nm.