Method for fabricating a magnetic recording transducer

• US 9,003,640 B1
• Filed: 02/04/2013
• Issued: 04/14/2015
• Est. Priority Date: 06/26/2009
• Status: Expired due to Fees

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: Western Digital (Fremont) LLC (Western Digital Corporation)
• Inventors: Park, Chando, Leng, Qunwen, Pakala, Mahendra
• Primary Examiner(s): Kim, Paul D
• Application Number:
  US13/757,910
• Time in Patent Office: 799 Days
• Field of Search: 296/030.7, 296/030.8, 2960311-60316, 296/031.8, 360/324.2, 360/324.12
• US Class Current: 29/603.14
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: F27D 19/00 Arrangements of controlling devices
• CPC Class Codes: F27D 7/06 Forming or maintaining special atmospheres or vacuum within heating chambers F27D7/02 takes precedence
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11B 5/127 Structure or manufacture of heads, e.g. inductive
• CPC Class Codes: G11B 5/3109 Details G11B5/3103 takes precedence
• CPC Class Codes: G11B 5/3163 Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/303 with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
• CPC Class Codes: H01F 41/307 insulating or semiconductive spacer
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 29/49039 with dual gap materials
• CPC Class Codes: Y10T 29/49041 with significant slider/housing shaping or treating
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 : Plural magnetic deposition layers
• CPC Class Codes: Y10T 29/49046 : with etching or machining of magnetic material
• CPC Class Codes: Y10T 29/49048 : Machining magnetic material [e.g., grinding, etching, polishing]
• CPC Class Codes: Y10T 29/49052 : by etching

Abstract

A method for fabricating a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. The portion of the magnetic transducer including the pinned layer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. The portion of the magnetic recording transducer is annealed in the high vacuum annealing apparatus. A tunneling barrier is provided after the step of annealing the part of the magnetic recording transducer. A free layer for the magnetic element is also provided.

Claims

1. A method for fabricating a magnetic recording transducer having an air-bearing surface (ABS) comprising:

providing a pinned layer for a magnetoresistive element;

transferring a part of the magnetic recording transducer that includes the pinned layer to a high vacuum annealing apparatus before annealing the part of the magnetic recording transducer, the step of transferring the part of the magnetic recording transducer including the pinned layer is performed while precluding exposure of the part of the magnetic recording transducer to an ambient environment;

annealing the part of the magnetic recording transducer including the pinned layer in the high vacuum annealing apparatus at an annealing temperature higher than a room temperature;

providing a tunneling barrier layer for the magnetoresistive element after the step of annealing the part of the magnetic recording transducer; and

providing a free layer for the magnetoresistive element, the tunneling barrier layer being between the free layer and the pinned layer, the magnetoresistive element including the pinned layer, the tunneling barrier layer and the free layer.

2. The method of claim 1 wherein the annealing temperature is not more than four hundred degrees centigrade.

3. The method of claim 2 wherein the annealing temperature is not more than two hundred degrees centigrade.

4. The method of claim 1 wherein the annealing temperature is at least one hundred degrees centigrade.

5. The method of claim 1, wherein the high vacuum is not more than 9×

10<sup>−

8</sup> Torr.

6. The method of claim 5, wherein the high vacuum is not more than 5×

10<sup>−

8</sup> Torr.

7. The method of claim 1, wherein the high vacuum is not more than 2×

10<sup>−

8</sup> Torr.

8. The method of claim 1, wherein the high vacuum is not more than 8×

10<sup>−

9</sup> Torr.