Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a first oxide semiconductor film including a first channel formation region;
performing first oxygen supplying treatment on the first oxide semiconductor film;
forming an insulating film over the first oxide semiconductor film;
forming a second oxide semiconductor film including a second channel formation region over the insulating film;
forming an opening in part of the insulating film so that the first channel formation region is exposed; and
performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film.
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Accused Products
Abstract
In a semiconductor device in which transistors are formed in a plurality of layers to form a stack structure, a method for manufacturing the semiconductor device formed by controlling the threshold voltage of the transistors formed in the layers selectively is provided. Further, a method for manufacturing the semiconductor device by which oxygen supplying treatment is effectively performed is provided. First oxygen supplying treatment is performed on a first oxide semiconductor film including a first channel formation region of a transistor in the lower layer. Then, an interlayer insulating film including an opening which is formed so that the first channel formation region is exposed is formed over the first oxide semiconductor film and second oxygen supplying treatment is performed on a second oxide semiconductor film including a second channel formation region over the interlayer insulating film and the exposed first channel formation region.
139 Citations
21 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a first oxide semiconductor film including a first channel formation region; performing first oxygen supplying treatment on the first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; forming a second oxide semiconductor film including a second channel formation region over the insulating film; forming an opening in part of the insulating film so that the first channel formation region is exposed; and performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising:
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forming a first oxide semiconductor film including a first channel formation region; performing first oxygen supplying treatment on the first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; forming a second oxide semiconductor film including a second channel formation region over the insulating film; forming an opening in part of the insulating film so that the first channel formation region is exposed; performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film; forming a gate insulating film over the second oxide semiconductor film; and forming a gate electrode over the gate insulating film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising:
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forming a first oxide semiconductor film including a first channel formation region; performing first oxygen supplying treatment on the first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; forming a gate electrode over the insulating film; forming a gate insulating film over the gate electrode; forming a second oxide semiconductor film including a second channel formation region over the gate insulating film; forming an opening in part of the insulating film and the gate insulating film so that the first channel formation region is exposed; and performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification