Semiconductor device and manufacturing method thereof

• US 9,006,729 B2
• Filed: 11/10/2010
• Issued: 04/14/2015
• Est. Priority Date: 11/13/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo, Sakata, Junichiro, Oikawa, Yoshiaki, Yamazaki, Shunpei
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): Parker, John M
• Application Number:
  US12/943,558
• Publication Number:
  US 20110114942A1
• Time in Patent Office: 1,616 Days
• Field of Search: 257/43, 257/E29.296, 257/288, 257/347, 257/368
• US Class Current: 257/43
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.

Claims

1. A semiconductor device comprising:

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and

a source electrode and a drain electrode which are in contact with one of a top surface of the oxide semiconductor film and a bottom surface of the oxide semiconductor film,

wherein the source electrode and the drain electrode include a metal with a lower electronegativity than an electronegativity of hydrogen, and

wherein a concentration of hydrogen in the source electrode and the drain electrode is greater than or equal to 1.2 times as high as a concentration of hydrogen in the oxide semiconductor film.

2. The semiconductor device according to claim 1, wherein the metal is one selected from the group consisting of magnesium, yttrium, and aluminum.

3. The semiconductor device according to claim 1, wherein the metal is one selected from the group consisting of titanium, molybdenum, and tungsten.

4. The semiconductor device according to claim 1, further comprising:

a first insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and

a second insulating film over the first insulating film,

wherein the first insulating film includes one of silicon oxide and silicon oxynitride, and

wherein the second insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.

5. The semiconductor device according to claim 1,

wherein the gate insulating film includes a first gate insulating film, and a second gate insulating film between the first gate insulating film and the oxide semiconductor film,

wherein the first gate insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide, and

wherein the second gate insulating film includes one of silicon oxide and silicon oxynitride.

6. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode comprise one selected from the group consisting of magnesium, yttrium, aluminum, titanium, molybdenum, and tungsten, and one selected from the group consisting of tantalum, chromium, neodymium, and scandium.

7. The semiconductor device according to claim 1, wherein the oxide semiconductor film is formed over the gate electrode.

8. A semiconductor device comprising:

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and

a source electrode and a drain electrode,

wherein each of the source electrode and the drain electrode includes a first conductive film in contact with one of a top surface of the oxide semiconductor film and a bottom surface of the oxide semiconductor film, and a second conductive film in contact with the first conductive film,

wherein the first conductive film includes a metal with a lower electronegativity than an electronegativity of hydrogen, and

wherein a concentration of hydrogen in the first conductive film is greater than or equal to 1.2 times as high as a concentration of hydrogen in the oxide semiconductor film.

9. The semiconductor device according to claim 8, wherein the metal is one selected from the group consisting of magnesium, yttrium, and aluminum.

10. The semiconductor device according to claim 8, wherein the metal is one selected from the group consisting of titanium, molybdenum, and tungsten.

11. The semiconductor device according to claim 8, further comprising:

a first insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and

a second insulating film over the first insulating film,

wherein the first insulating film includes one of silicon oxide and silicon oxynitride, and

wherein the second insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.

12. The semiconductor device according to claim 8,

wherein the gate insulating film includes a first gate insulating film, and a second gate insulating film between the first gate insulating film and the oxide semiconductor film,

wherein the first gate insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide, and

wherein the second gate insulating film includes one of silicon oxide and silicon oxynitride.

13. The semiconductor device according to claim 8, wherein the source electrode and the drain electrode comprise one selected from the group consisting of magnesium, yttrium, aluminum, titanium, molybdenum, and tungsten, and one selected from the group consisting of tantalum, chromium, neodymium, and scandium.

14. The semiconductor device according to claim 8, wherein a conductivity of the second conductive film is lower than a conductivity of the first conductive film.

15. The semiconductor device according to claim 8, wherein the oxide semiconductor film is formed over the gate electrode.

16. A semiconductor device comprising:

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and

a source electrode and a drain electrode which are in contact with one of a to surface of the oxide semiconductor film and a bottom surface of the oxide semiconductor film,

wherein the source electrode and the drain electrode include a metal with a lower electronegativity than an electronegativity of hydrogen, and

wherein a concentration of hydrogen in the source electrode and the drain electrode is greater than or equal to 5 times as high as a concentration of hydrogen in the oxide semiconductor film.

17. The semiconductor device according to claim 16, wherein the metal is one selected from the group consisting of magnesium, yttrium, and aluminum.

18. The semiconductor device according to claim 16, wherein the metal is one selected from the group consisting of titanium, molybdenum, and tungsten.

19. The semiconductor device according to claim 16, further comprising:

a first insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and

a second insulating film over the first insulating film,

wherein the first insulating film includes one of silicon oxide and silicon oxynitride, and

wherein the second insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.

20. The semiconductor device according to claim 16,

wherein the gate insulating film includes a first gate insulating film, and a second gate insulating film between the first gate insulating film and the oxide semiconductor film,

wherein the first gate insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide, and

wherein the second gate insulating film includes one of silicon oxide and silicon oxynitride.

21. The semiconductor device according to claim 16, wherein the source electrode and the drain electrode comprise one selected from the group consisting of magnesium, yttrium, aluminum, titanium, molybdenum, and tungsten, and one selected from the group consisting of tantalum, chromium, neodymium, and scandium.

22. The semiconductor device according to claim 16, wherein the oxide semiconductor film is formed over the gate electrode.

23. A semiconductor device comprising:

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and

a source electrode and a drain electrode,

wherein each of the source electrode and the drain electrode includes a first conductive film in contact with one of a top surface of the oxide semiconductor film and a bottom surface of the oxide semiconductor film, and a second conductive film in contact with the first conductive film,

wherein the first conductive film includes a metal with a lower electronegativity than an electronegativity of hydrogen, and

wherein a concentration of hydrogen in the first conductive film is greater than or equal to 5 times as high as a concentration of hydrogen in the oxide semiconductor film.

24. The semiconductor device according to claim 23, wherein the metal is one selected from the group consisting of magnesium, yttrium, and aluminum.

25. The semiconductor device according to claim 23, wherein the metal is one selected from the group consisting of titanium, molybdenum, and tungsten.

26. The semiconductor device according to claim 23, further comprising:

a first insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and

a second insulating film over the first insulating film,

wherein the first insulating film includes one of silicon oxide and silicon oxynitride, and

wherein the second insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.

27. The semiconductor device according to claim 23,

wherein the gate insulating film includes a first gate insulating film, and a second gate insulating film between the first gate insulating film and the oxide semiconductor film,

wherein the first gate insulating film includes one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide, and

wherein the second gate insulating film includes one of silicon oxide and silicon oxynitride.

28. The semiconductor device according to claim 23, wherein the source electrode and the drain electrode comprise one selected from the group consisting of magnesium, yttrium, aluminum, titanium, molybdenum, and tungsten, and one selected from the group consisting of tantalum, chromium, neodymium, and scandium.

29. The semiconductor device according to claim 23, wherein a conductivity of the second conductive film is lower than a conductivity of the first conductive film.

30. The semiconductor device according to claim 23, wherein the oxide semiconductor film is formed over the gate electrode.