Semiconductor light-emitting device and light source device using the same

• US 9,006,763 B2
• Filed: 05/19/2010
• Issued: 04/14/2015
• Est. Priority Date: 05/22/2009
• Status: Expired due to Fees

• Current Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Inventors: Ueno, Yasuharu, Kurachi, Toshiaki
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Gebreyesus, Yosef
• Application Number:
  US13/257,805
• Publication Number:
  US 20120007131A1
• Time in Patent Office: 1,791 Days
• Field of Search: 257/13, 257/79, 257/93, 257/94, 257/95, 257/96, 257/97, 257/98, 257/99, 257/100, 257/101, 257/102, 257/103, 257/E33.001, 257/E51.002, 257/E33.067
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light-emitting device according to the present invention is a semiconductor light-emitting device 10 including a solid-state light-emitting element 11 and a wavelength converter 12 that converts primary light emitted by the solid-state light-emitting element 11 into light having a longer wavelength, wherein the wavelength converter 12 includes a wavelength converting layer 12a made from a translucent inorganic formed body containing phosphors, and a binder layer 12b; the wavelength converter 12 is disposed on a main light extraction surface 11a of the solid-state light-emitting element 11; and the binder layer 12b is disposed along an emission direction of light emitted from the main light extraction surface 11a.

Claims

1. A semiconductor light-emitting device comprising:

a solid-state light-emitting element; and

a wavelength converter that converts primary light emitted by the solid-state light-emitting element into light having a longer wavelength, wherein

the wavelength converter includes a binder layer comprising a phosphor and a wavelength converting layer made from a single phosphor ceramic,

the phosphor of the binder layer consists of a red phosphor,

the wavelength converting layer is divided by the binder layer,

the wavelength converter is disposed on a main light extraction surface of the solid-state light-emitting element, and

the binder layer is disposed along an emission direction of light emitted from the main light extraction surface.

2. The semiconductor light-emitting device according to claim 1, wherein the binder layer is disposed in a direction perpendicular to the main light extraction surface.

3. The semiconductor light-emitting device according to claim 1, wherein the binder layer penetrates through the wavelength converter.

4. The semiconductor light-emitting device according to claim 1, wherein the wavelength converter is adhered to the main light extraction surface of the solid-state light-emitting element via a translucent adhesive layer.

5. The semiconductor light-emitting device according to claim 4;

wherein the adhesive layer is composed of the same material as that of the binder layer.

6. The semiconductor light-emitting device according to claim 1, wherein the solid-state light-emitting element includes a power supply electrode on a side of the main light extraction surface, and the wavelength converter is disposed on the main light extraction surface in such a manner as to avoid the power supply electrode.

7. The semiconductor light-emitting device according to claim 1, wherein the solid-state light-emitting element includes a n-type wiring, and the wavelength converter is disposed on the main light extraction surface in such a manner as to avoid the n-type wiring.

8. The semiconductor light-emitting device according to claim 1, wherein the binder layer has a function of mixing, by light scattering, at least a part of the primary light emitted by the solid-state light-emitting element, and a part of light emitted by the wavelength converter, the part of the primary light being a part thereof passing through the binder layer.

9. The semiconductor light-emitting device according to claim 8, wherein the binder layer includes one or more materials with a light-scattering function or light-shielding function that are selected from the group consisting of Y₂O₃, Al₂O₃, SiO₂, ZrO₂, glass beads and bubbles.

10. The semiconductor light-emitting device according to claim 1, wherein the binder layer has a function of blocking, at least partially, a part of the primary light emitted by the solid-state light-emitting element, the part of the primary light being a part thereof entering the binder layer.

11. The semiconductor light-emitting device according to claim 10, wherein the binder layer includes one or more materials with a light-scattering function or light-shielding function that are selected from the group consisting of Y₂O₃, Al₂O₃, SiO₂, ZrO₂, glass beads and bubbles.

12. The semiconductor light-emitting device according to claim 1, wherein the wavelength converting layer exists continuously from the solid-state light-emitting element toward an outward direction.

13. A light source device comprising the semiconductor light-emitting device according to claim 1.