Light emitting device and light emitting device package having the same

• US 9,006,776 B2
• Filed: 10/14/2014
• Issued: 04/14/2015
• Est. Priority Date: 02/09/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Primary Examiner(s): Tran, Tony
• Application Number:
  US14/513,821
• Publication Number:
  US 20150054015A1
• Time in Patent Office: 182 Days
• Field of Search: 257/99, 257/E33.059
• US Class Current: 257/99
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

Disclosed are a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer, an electrode connected to the first conductive semiconductor layer. First to third conductive layers are disposed under the second conductive semiconductor layer. A protective layer is disposed outward further than the first conductive layer. A support member is disposed under the third conductive layer. A buffer layer is disposed between protective layer and the third conductive layer. The protective layer includes a first opening, a first portion, and a second portion. The second portion of the protective layer and the buffer layer is overlapped with the third conductive layer and is disposed outwardly further than a lateral surface of the first conductive layer.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers;

an electrode connected to the first conductive semiconductor layer;

a first conductive layer disposed under the second conductive semiconductor layer;

a second conductive layer disposed under the first conductive layer;

a protective layer disposed on an outer portion of a lower surface of the second conductive semiconductor layer and disposed outward further than the first conductive layer; and

a third conductive layer disposed under the second conductive layer and the protective layer;

a support member disposed under the third conductive layer; and

a buffer layer disposed between the protective layer and the third conductive layer and includes a metallic material,

wherein the protective layer includes a first opening, a first portion contacted with the lower surface of the second conductive semiconductor layer, and a second portion disposed outwardly further than the first portion,

wherein the first conductive layer is disposed in the first opening of the protective layer,

wherein the second portion of the protective layer and the buffer layer is overlapped with the third conductive layer in a vertical direction, and

wherein the buffer layer is disposed outwardly further than a lateral surface of the first conductive layer; and

wherein the protective layer has a thickness of 0.02 μ

m to 5 μ

m,

wherein the buffer layer has a thickness thinner than a thickness of the protective layer or has a thickness in a range of 1 μ

m to 10 μ

m.

2. The semiconductor light emitting device of claim 1, wherein the buffer layer includes a second opening and a portion of the third conductive layer is disposed in the second opening.

3. The semiconductor light emitting device of claim 2, wherein the second opening has a width wider than that of the first opening.

4. The semiconductor light emitting device of claim 2, wherein the buffer layer is formed of a different material from the first and second conductive layers.

5. The semiconductor light emitting device of claim 2, wherein the support member is formed of a metal and is overlapped with the buffer layer and the protective layer in the vertical direction.

6. The semiconductor light emitting device of claim 1, further comprising an insulating layer contacted with a lateral surface of the light emitting structure.

7. The semiconductor light emitting device of claim 6, wherein the insulating layer contacts a top surface of the protective layer and a top surface of the first conductive semiconductor layer.

8. The semiconductor light emitting device of claim 6, wherein the buffer layer contacts the protective layer and the third conducive layer.

9. The semiconductor light emitting device of claim 1, wherein the protective layer includes a transmissive material.

10. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers;

an electrode connected to the first conductive semiconductor layer;

a first conductive layer disposed under the second conductive semiconductor layer;

a second conductive layer disposed under the first conductive layer;

a protective layer disposed on an outer portion of a lower surface of the second conductive semiconductor layer and disposed outward further than the first conductive layer; and

a third conductive layer disposed under the second conductive layer and the protective layer;

a support member disposed under the third conductive layer; and

a first buffer layer disposed between the protective layer and the third conductive layer,

wherein the protective layer includes a first opening, a first portion contacted with the lower surface of the second conductive semiconductor layer, and a second portion disposed outwardly further than the first portion,

wherein the first conductive layer is disposed in the first opening of the protective layer,

wherein the second portion of the protective layer and the first buffer layer is overlapped with the third conductive layer in a vertical direction, and

wherein the first buffer layer is disposed outwardly further than a lateral surfaces of the first and second conductive layers; and

wherein the protective layer has a thickness of 0.02 μ

m to 5 μ

m,

wherein the buffer layer has a thickness thinner than a thickness of the protective layer or has a thickness in a range of 1 μ

m to 10 μ

m.

11. The semiconductor light emitting device of claim 10, wherein the first buffer layer contacts the protective layer and the third conductive layer.

12. The semiconductor light emitting device of claim 11, wherein the first buffer layer includes a different material from the second and third conductive layers,

wherein the second conductive layer is a reflective layer.

13. The semiconductor light emitting device of claim 12, wherein the protective layer is disposed around the first and second conductive layers.

14. The semiconductor light emitting device of claim 10, wherein the protective layer includes a transmissive material and the support member includes a metal.

15. The semiconductor light emitting device of claim 10, further comprising a second buffer layer disposed on a top surface of the protective layer and overlapped with the first buffer layer.

16. The semiconductor light emitting device of claim 15, wherein the second buffer layer is disposed outwardly further than the first and second conductive layers and the first buffer layer is spaced apart from the first and second conductive layers.

17. The semiconductor light emitting device of claim 10, further comprising an insulating layer contacted with a lateral surface of the light emitting structure and a top surface of the protective layer,

wherein the support member has a width wider that of the second conductive semiconductor layer and includes an outer region overlapped with the first buffer layer.

18. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers;

an electrode connected to the first conductive semiconductor layer;

a conductive layer contact a lower surface of the second conductive semiconductor layer;

a reflective electrode layer disposed under the contact layer;

a protective layer disposed on an outer portion of the lower surface of the second conductive semiconductor layer and disposed outward further than the first conductive layer; and

a conductive adhesion layer disposed under the reflective electrode layer and the protective layer;

a conductive support member disposed under the conductive adhesion layer; and

a buffer layer disposed between the protective layer and the conductive adhesion layer,

wherein the protective layer includes a first opening, a first portion contacted with the lower surface of the second conductive semiconductor layer, and a second portion disposed outwardly further than the first portion,

wherein the conductive contact layer is disposed in the first opening of the protective layer,

wherein the second portion of the protective layer and the buffer layer is overlapped with the conductive adhesion layer in a vertical direction,

wherein the buffer layer is disposed outwardly further than a lateral surfaces of the conductive contact layer and the reflective electrode layer, and

wherein the buffer layer includes a different material from the reflective electrode layer; and

wherein the protective layer has a thickness of 0.02 μ

m to 5 μ

m,

wherein the buffer layer has a thickness thinner than a thickness of the protective layer or has a thickness in a range of 1 μ

m to 10 μ

m.

19. The semiconductor light emitting device of claim 18, wherein the buffer layer is located at a lower position than a bottom surface of the reflective electrode layer.