Electronic device comprising a conductive structure and an insulating layer within a trench
First Claim
1. An electronic device comprising:
- a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of the semiconductor layer to a first depth;
a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench;
a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure;
a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure; and
a gate member substantially overlying the primary surface of the semiconductor layer.
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Accused Products
Abstract
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the thickness of semiconductor layer to a depth. The electronic device can further include a conductive structure within the trench, wherein the conductive structure extends at least approximately 50% of the depth of the trench. The electronic device can still further include a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the conductive structure; and an insulating layer disposed between the vertically-oriented doped region and the conductive structure. A process of forming an electronic device can include patterning a semiconductor layer to define a trench extending through at least approximately 50% of the thickness of the semiconductor layer and forming a vertically-oriented doped region after patterning the semiconductor layer to define the trench.
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Citations
20 Claims
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1. An electronic device comprising:
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a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of the semiconductor layer to a first depth; a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench; a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure; a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure; and a gate member substantially overlying the primary surface of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An electronic device comprising:
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a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of the semiconductor layer to a first depth; a vertically-oriented doped region disposed within the semiconductor layer and extending from near the primary surface towards the substrate, the vertically-oriented doped region is positioned adjacent to the first trench; a first conductive structure disposed within the first trench; a first insulating layer disposed between the first conductive structure and the semiconductor layer; a channel region adjacent to the primary surface of the semiconductor layer; and a gate member that substantially overlies the primary surface of the semiconductor layer. - View Dependent Claims (15, 16, 17, 18)
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19. An electronic device comprising:
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a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench and a second trench extend through at least approximately 50% of the thickness of the semiconductor layer to a first depth; a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench; a second conductive structure within the second trench, wherein the second conductive structure extends through at least approximately 50% of the thickness of the semiconductor layer; a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure; a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure; a source region outside of and adjacent to the second trench, wherein the source region is spaced apart from the vertically oriented doped region by a channel region; and a second insulating layer disposed between the source region and the second conductive structure. - View Dependent Claims (20)
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Specification