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Electronic device comprising a conductive structure and an insulating layer within a trench

  • US 9,006,821 B2
  • Filed: 02/03/2014
  • Issued: 04/14/2015
  • Est. Priority Date: 12/15/2011
  • Status: Active Grant
First Claim
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1. An electronic device comprising:

  • a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of the semiconductor layer to a first depth;

    a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench;

    a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure;

    a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure; and

    a gate member substantially overlying the primary surface of the semiconductor layer.

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