Thin power device and preparation method thereof
First Claim
1. A thin power device comprising:
- a substrate having a first set of first contact pads arranged at a front surface of the substrate and a second set of second contact pads arranged at a back surface of the substrate, wherein each first contact pad in the first set of contact pads being electrically connected with a second contact pad in the second set of contact pads;
a through opening opened from the front surface and through the substrate thus exposing a third contact pad at the back surface of the substrate, wherein the third contact pad is one of the second set of second contact pads not electrically connected with any first contact pad in the first set of contact pads;
a semiconductor chip embedded into the through opening, wherein a back metal layer at a back surface of the chip is attached on the third contact pad; and
a plurality of conductive structures electrically connecting electrodes at a front surface of the chip with the corresponding first contact pads in the first sets of contact pads.
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Accused Products
Abstract
A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.
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Citations
6 Claims
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1. A thin power device comprising:
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a substrate having a first set of first contact pads arranged at a front surface of the substrate and a second set of second contact pads arranged at a back surface of the substrate, wherein each first contact pad in the first set of contact pads being electrically connected with a second contact pad in the second set of contact pads; a through opening opened from the front surface and through the substrate thus exposing a third contact pad at the back surface of the substrate, wherein the third contact pad is one of the second set of second contact pads not electrically connected with any first contact pad in the first set of contact pads; a semiconductor chip embedded into the through opening, wherein a back metal layer at a back surface of the chip is attached on the third contact pad; and a plurality of conductive structures electrically connecting electrodes at a front surface of the chip with the corresponding first contact pads in the first sets of contact pads. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification