Light-emitting device and electronic device using the same
First Claim
Patent Images
1. A light-emitting device comprising:
- a transistor over a substrate;
a color filter over the transistor;
a light-emitting element over the color filter; and
a resin film over the light-emitting element,wherein the transistor and the color filter overlap each other in a vertical direction,wherein a channel formation region of the transistor comprises an oxide semiconductor layer, andwherein the transistor and the light-emitting element are sealed by the resin film and the substrate.
0 Assignments
0 Petitions
Accused Products
Abstract
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
-
Citations
17 Claims
-
1. A light-emitting device comprising:
-
a transistor over a substrate; a color filter over the transistor; a light-emitting element over the color filter; and a resin film over the light-emitting element, wherein the transistor and the color filter overlap each other in a vertical direction, wherein a channel formation region of the transistor comprises an oxide semiconductor layer, and wherein the transistor and the light-emitting element are sealed by the resin film and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A light-emitting device comprising:
-
a transistor over a substrate; a color filter over the transistor; a light-emitting element over the color filter; and a resin film over the light-emitting element, wherein the transistor and the color filter overlap each other in a vertical direction, wherein a channel formation region of the transistor comprises an oxide semiconductor layer, wherein the transistor and the light-emitting element are sealed by the resin film and the substrate, and wherein the light-emitting element comprises; a first EL layer over a first electrode; a charge generation layer over the first EL layer; a second EL layer over the charge generation layer; and a second electrode over the second EL layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
-
Specification