Light-emitting device and electronic device using the same

• US 9,006,965 B2
• Filed: 01/31/2014
• Issued: 04/14/2015
• Est. Priority Date: 07/10/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Seo, Satoshi, Hatano, Kaoru
• Primary Examiner(s): Patel, Nimeshkumar
• Assistant Examiner(s): QUARTERMAN, KEVIN J
• Application Number:
  US14/169,553
• Publication Number:
  US 20140145190A1
• Time in Patent Office: 438 Days
• Field of Search: 313498-512, 313/112
• US Class Current: 313/498
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/13 comprising stacked EL layers within one EL unit
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.

Claims

1. A light-emitting device comprising:

a transistor over a substrate;

a color filter over the transistor;

a light-emitting element over the color filter; and

a resin film over the light-emitting element,

wherein the transistor and the color filter overlap each other in a vertical direction,

wherein a channel formation region of the transistor comprises an oxide semiconductor layer, and

wherein the transistor and the light-emitting element are sealed by the resin film and the substrate.

2. The light-emitting device according to claim 1, further comprising an adhesive between the substrate and the transistor,

wherein the substrate comprises an organic resin.

3. The light-emitting device according to claim 1,

wherein the transistor comprises a gate insulating film, and

wherein the gate insulating film comprises a silicon nitride film and a silicon oxide film.

4. The light-emitting device according to claim 1,

wherein the light-emitting element emits light with white color.

5. The light-emitting device according to claim 1,

wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

6. The light-emitting device according to claim 1,

wherein the light-emitting device is configured to emit light from the light-emitting element through the substrate.

7. The light-emitting device according to claim 1,

wherein the transistor, the color filter, and the substrate overlap each other in the vertical direction.

8. The light-emitting device according to claim 1,

wherein the substrate has flexibility.

9. A light-emitting device comprising:

a transistor over a substrate;

a color filter over the transistor;

a light-emitting element over the color filter; and

a resin film over the light-emitting element,

wherein the transistor and the color filter overlap each other in a vertical direction,

wherein a channel formation region of the transistor comprises an oxide semiconductor layer,

wherein the transistor and the light-emitting element are sealed by the resin film and the substrate, and

wherein the light-emitting element comprises;

a first EL layer over a first electrode;

a charge generation layer over the first EL layer;

a second EL layer over the charge generation layer; and

a second electrode over the second EL layer.

10. The light-emitting device according to claim 9, further comprising an adhesive between the substrate and the transistor,

wherein the substrate comprises an organic resin.

11. The light-emitting device according to claim 9,

wherein the transistor comprises a gate insulating film, and

wherein the gate insulating film comprises a silicon nitride film and a silicon oxide film.

12. The light-emitting device according to claim 9,

wherein the light-emitting element emits light with white color.

13. The light-emitting device according to claim 9,

wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

14. The light-emitting device according to claim 9,

wherein the light-emitting device is configured to emit light from the light-emitting element through the substrate.

15. The light-emitting device according to claim 9,

wherein the first electrode has light-transmitting ability and is electrically connected to the transistor.

16. The light-emitting device according to claim 9,

wherein the transistor, the color filter, and the substrate overlap each other in the vertical direction.

17. The light-emitting device according to claim 9,

wherein the substrate has flexibility.