Illumination system having a beam deflection array for illuminating a mask in a microlithographic projection exposure apparatus

• US 9,007,563 B2
• Filed: 02/23/2010
• Issued: 04/14/2015
• Est. Priority Date: 08/30/2007
• Status: Active Grant

• Current Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Inventors: Deguenther, Markus, Layh, Michael
• Primary Examiner(s): LIU, CHIA HOW MICHAEL
• Application Number:
  US12/711,059
• Publication Number:
  US 20100157269A1
• Time in Patent Office: 1,876 Days
• Field of Search: 355/67, 355/45, 355/53
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70116 Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
• CPC Class Codes: G03F 7/702 Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Abstract

An illumination system for illuminating a mask in a scanning microlithographic projection exposure apparatus has an objective with an object plane, at least one pupil surface and an image plane in which a mask can be arranged. A beam deflection array of reflective or transparent beam deflection elements is provided, where each beam deflection element is adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal. The beam deflection elements are arranged in or in close proximity to the object plane of the objective.

Claims

1. A system, comprising:

an objective having an object plane, a pupil surface and an image plane in which a mask can be arranged;

a beam deflection array comprising beam deflection elements,

wherein;

during use, light passes through the objective along a light path,

each beam deflection element is adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal,

the objective is configured to image the beam deflection array onto the mask,

there is no device downstream of the beam deflection array that homogenizes an illumination of the mask,

the beam deflection elements are arranged at a distance A<

A_max from the object plane, and the distance A_max is the shortest distance from the object plane at which two light bundles emerging from opposite edges of a beam deflection element intersect, and

the system is an illumination system for a scanning microlithographic projection exposure apparatus.

2. The illumination system of claim 1, further comprising:

a light source; and

a field defining raster element arranged between the light source and the beam deflection array.

3. The illumination system of claim 2, wherein the field defining raster element is adapted to produce a two dimensional far field intensity distribution that at least partially determines a shape of a field which is illuminated on the mask during use of the illumination system.

4. The illumination system of claim 3, wherein the far field intensity distribution is shaped as a rectangle or a curved slit.

5. The illumination system of claim 3, wherein the far field intensity distribution is shaped as a curved slit having a length which is at least twice as long as its lateral width.

6. The illumination system of claim 2, wherein the field defining raster element comprises a diffractive optical element.

7. The illumination system of claim 2, wherein the field defining raster element comprises at least one array of microlenses.

8. The illumination system of claim 2, further comprising a condenser arranged between the field defining raster element and the beam deflection array.

9. The illumination system of claim 1, further comprising a pupil defining raster element arranged in a plane which is optically conjugated to the image plane of the objective.

10. The illumination system of claim 9, wherein there is a two-dimensional far field intensity distribution in the pupil surface of the objective, the two-dimensional far field distribution is a convolution of a far field intensity distribution produced by the beam deflection array and a far field intensity distribution produced by the pupil defining raster element.

11. The illumination system of claim 9, wherein the pupil defining raster element is adapted to produce a far field intensity distribution that has at least substantially the shape of a polygon having n corners, with n=3, 4, . . . .

12. The illumination system of claim 1, wherein:

each beam deflection element is adapted to be either in a first state or in a second off state;

in the first state, a deflected light beam passes the pupil surface; and

in the second state, a deflected light ray does not pass the pupil surface.

13. The illumination system of claim 1, further comprising a field stop.

14. The illumination system of claim 13, wherein the field stop is arranged in the object plane.

15. The illumination system of claim 13, wherein the objective has an intermediate image plane, and the field stop is arranged in the intermediate image plane of the objective.

16. The illumination system of claim 13, wherein the field stop has a stop edge that:

a) extends at least substantially along a direction which is perpendicular to a scanning direction; and

b) has indentations, each indentation corresponding to a gap between adjacent beam deflection elements.

17. The illumination system of claim 16, wherein the stop edge is formed by a plurality of blades, and a shape and/or a position of at least some of the blades is adjustable via an actuator.

18. The illumination system of claim 1, wherein the beam deflection elements are arranged in a staggered manner so that at least one beam deflection element is illuminated on any arbitrary line which extends parallel to a scan direction between opposite ends of the beam deflection array.

19. The illumination system of claim 1, wherein the beam deflection elements are transparent elements that deflect light rays passing through the transparent elements.

20. The illumination system of claim 19, wherein the transparent elements are electro-optical or acousto-optical elements.

21. The illumination system of claim 1, wherein the beam deflection elements are mirrors that can be tilted relative to the object plane.

22. The illumination system of claim 21, wherein the mirrors can be tilted by two tilt axes forming an angle therebetween.

23. The illumination system of claim 1, wherein the object plane and the image plane are inclined to each other.

24. The illumination system of claim 23, wherein the objective has an optical axis which is inclined both with respect to a normal on the object plane and to a normal on the image plane.

25. The illumination system of claim 24, wherein the object plane and an object side principal plane of the objective at least substantially intersect along a first straight line, and the image plane and an image side principal plane of the objective at least substantially intersect along a second straight line.

26. The illumination system of claim 1, wherein the beam deflection elements are arranged at a distance A with |A|>

A_min from the object plane, and the distance A_min is the shortest distance from the object plane at which a usable field in the object plane can be completely illuminated by the beam deflection elements.

27. An apparatus, comprising:

an illumination system, comprising;

an objective having an object plane, a pupil surface and an image plane in which a mask can be arranged; and

a beam deflection array comprising reflective or transparent beam deflection elements, each beam deflection element being adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal; and

a projection objective configured to image the mask onto a light sensitive layer,

wherein;

during use, light passes through the objective along a light path,

the objective is configured to image the beam deflection array onto the mask,

there is no device downstream of the beam deflection array that homogenizes an illumination of the mask,

the beam deflection elements are arranged at a distance A<

A_max from the object plane, and the distance A_max is the shortest distance from the object plane at which two light bundles emerging from opposite edges of a beam deflection element intersect, and

the apparatus is a microlithographic projection exposure apparatus.

28. The apparatus of claim 27, wherein the beam deflection elements are arranged at a distance A with |A|>

A_min from the object plane, and the distance A_min is the shortest distance from the object plane at which a usable field in the object plane can be completely illuminated by the beam deflection elements.