Device for measuring forces and method of making the same
First Claim
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1. A device for measuring forces, the device comprising:
- a first wafer comprising a first buried oxide layer disposed between a first device layer and a second device layer;
a second wafer joined to the first device layer by a second buried oxide layer;
a diaphragm cavity extending from the second device layer, through the first device layer, the second buried oxide layer, and the second wafer, wherein the second device layer forms a diaphragm over the diaphragm cavity;
a boss structure within the diaphragm cavity, the boss structure extending from the first buried oxide layer, the boss structure having substantially parallel sidewalls; and
a first sensor in the second device layer proximate to the diaphragm to sense flexure in the diaphragm.
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Abstract
A device for measuring forces and a method of making the same. The device has a boss structure within a diaphragm cavity, wherein the boss structure has substantially parallel sidewalls. One or more sensors are installed proximate to the diaphragm to sense flexure in the diaphragm, which is controlled by the boss structure.
34 Citations
13 Claims
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1. A device for measuring forces, the device comprising:
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a first wafer comprising a first buried oxide layer disposed between a first device layer and a second device layer; a second wafer joined to the first device layer by a second buried oxide layer; a diaphragm cavity extending from the second device layer, through the first device layer, the second buried oxide layer, and the second wafer, wherein the second device layer forms a diaphragm over the diaphragm cavity; a boss structure within the diaphragm cavity, the boss structure extending from the first buried oxide layer, the boss structure having substantially parallel sidewalls; and a first sensor in the second device layer proximate to the diaphragm to sense flexure in the diaphragm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13)
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10. A device for measuring forces, the device comprising:
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a first wafer comprising a first buried oxide layer disposed between a first device layer and a second device layer; a second wafer joined to the first device layer by a second buried oxide layer; a diaphragm cavity extending from the second device layer, through the first device layer, the second buried oxide layer, and the second wafer, wherein the second device layer forms a diaphragm over the diaphragm cavity; a boss structure within the diaphragm cavity, the boss structure extending from the first buried oxide layer, the boss structure having substantially parallel sidewalls and substantially uniform thickness over its width; and a first sensor in the second device layer proximate to the diaphragm to sense flexure in the diaphragm.
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Specification