Methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices

• US 9,012,286 B2
• Filed: 04/12/2012
• Issued: 04/21/2015
• Est. Priority Date: 04/12/2012
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Chi, Min-Hwa
• Primary Examiner(s): Monbleau, Davienne
• Assistant Examiner(s): WHITE, SHAKA SHAKAR
• Application Number:
  US13/445,428
• Publication Number:
  US 20130270641A1
• Time in Patent Office: 1,104 Days
• Field of Search: None
• US Class Current: 438/283
• CPC Class Codes: H01L 21/823821 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/66818 the channel being thinned after patterning, e.g. sacrificial oxidation on fin

Abstract

Disclosed herein are various methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate to define at least one fin (or fins) for the device, prior to forming a gate structure above the fin (or fins), performing a first epitaxial growth process to grow a first semiconductor material on exposed portions of the fin (or fins) and forming the gate structure above the first semiconductor material on the fin (or fins).

Claims

1. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining at least one fin comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of said at least one fin extends above an upper surface of said layer of insulating material so as to expose all sidewall surfaces and an entirety of a top surface of said upper portion of said at least one fin;

after forming said layer of insulating material, forming a conformal mask layer on all of said exposed sidewall and top surfaces of said upper portion of said at least one fin, wherein an exposed surface of said conformal mask layer conforms to a shape of said upper portion of said at least one fin;

removing said conformal mask layer from said upper portion of said at least one fin so as to re-expose all of said sidewall and top surfaces of said upper portion;

after removing said conformal mask layer and prior to forming a gate structure above said at least one fin, performing a first epitaxial growth process to grow a first semiconductor material at least at a location on said re-exposed upper portion of said at least one fin where at least a portion of said gate structure will be formed thereabove; and

forming said gate structure above said first semiconductor material on said at least one fin.

2. The method of claim 1, further comprising, after forming said first semiconductor material, but prior to forming said gate structure, performing a second epitaxial growth process to form a second semiconductor material on said first semiconductor material.

3. The method of claim 1, wherein said FinFET device is an N-type FinFET device and wherein said first semiconductor material is comprised of silicon-carbon.

4. The method of claim 1, wherein said FinFET device is a P-type FinFET device and wherein said first semiconductor material is comprised of silicon-germanium.

5. The method of claim 2, wherein said FinFET device is a P-type FinFET device and wherein said first semiconductor material is comprised of silicon-germanium and said second semiconductor material is comprised of silicon.

6. The method of claim 1, wherein said semiconducting substrate is comprised of silicon.

7. The method of claim 1, wherein said first semiconductor material is comprised of silicon, silicon-carbon, silicon-germanium, a III-V compound or a II-VI compound.

8. The method of claim 2, wherein said second semiconductor material is comprised of silicon, silicon-carbon, silicon-germanium, a III-V compound or a II-VI compound.

9. The method of claim 1, wherein said first semiconductor material extends along an entire axial length of said at least one fin.

10. The method of claim 2, wherein said second semiconductor material extends along an entire axial length of said at least one fin.

11. The method of claim 1, wherein said device comprises a plurality of fins and wherein said first semiconductor material is formed on all of the fins in said device.

12. The method of claim 11, wherein, after forming said first semiconductor material on all of the fins in said device, but prior to forming said gate structure, performing a second epitaxial growth process to form a second semiconductor material on said first semiconductor material on all of said fins.

13. The method of claim 2, wherein said second semiconductor material is formed at least at a location on said at least one fin where at least a portion of said gate structure will be formed thereabove.

14. The method of claim 1, wherein forming said layer of insulating material comprises:

performing a deposition process to form said layer of insulating material to a thickness such that it overfills said trenches; and

performing an etching process to reduce said thickness of said layer of insulating material such that an upper surface of said layer of insulating material is positioned at a level that is below a level of an upper surface of said at least one fin.

25. The method of claim 1, wherein forming said conformal mask layer comprises performing an oxidation process.

26. The method of claim 1, wherein forming said conformal mask layer comprises depositing a conformal layer of mask material.

27. The method of claim 1, wherein said plurality of spaced-apart trenches define at least one additional fin, an upper portion of said at least one additional fin extending above said upper surface of said layer of insulating material so as to expose all sidewall surfaces and an entirety of a top surface of said upper portion of said at least one additional fin, the method further comprising:

forming said conformal mask layer on all of said exposed sidewall and top surfaces of said upper portion of said at least one additional fin;

leaving said conformal mask layer on said all exposed surfaces of said upper portion of said at least one additional fin while removing said conformal mask layer from said upper portion of said at least one fin; and

leaving said conformal mask layer on said all exposed surfaces of said upper portion of said at least one additional fin while performing said first epitaxial growth process to grow said first semiconductor material on said at least said portion of said re-exposed surfaces of said upper portion of said at least one fin.

15. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of each of said plurality of fins extends above an upper surface of said layer of insulating material so that all surfaces of said upper portions are exposed;

after forming said layer of insulating material, forming a conformal mask layer on said all exposed surfaces of said upper portion of each of said plurality of fins;

removing said conformal mask layer from a respective upper portion of at least a first one of said plurality of fins so as to re-expose said all surfaces of said respective upper portion of said at least said first one of said plurality of fins;

after re-exposing said all surfaces of said respective upper portion of said at least said first one of said plurality of fins and prior to forming a gate structure above said plurality of fins, performing a first epitaxial growth process to grow a first semiconductor material on at least a portion of each of said plurality of fins, wherein said first semiconductor material is formed at least at a location on each of said plurality of fins where at least a portion of said gate structure will be formed thereabove; and

forming said gate structure above said first semiconductor material.

16. The method of claim 15, wherein said first semiconductor material extends along an entire axial length of each of said plurality of fins.

28. The method of claim 15, wherein forming said conformal mask layer comprises performing an oxidation process.

29. The method of claim 15, wherein forming said conformal mask layer comprises depositing a conformal layer of mask material.

30. The method of claim 15, wherein removing said conformal mask layer from said respective upper portion of said at least said first one of said plurality of fins comprises leaving said conformal mask layer on a respective upper portion of at least a second one of said plurality of fins.

17. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of each of said plurality of fins extends above an upper surface of said layer of insulating material so that all surfaces of said upper portions are exposed;

after forming said layer of insulating material, forming a conformal mask layer on said all exposed surfaces of said upper portion of each of said plurality of fins;

selectively removing said conformal mask layer from a respective upper portion of a first one of said plurality of fins so as to re-expose said all surfaces of said respective upper portion of said first one of said plurality of fins;

prior to forming a gate structure above said plurality of fins, performing a first epitaxial growth process to grow a first semiconductor material on at least a portion of said re-exposed surfaces of said first one of said plurality of fins, wherein said first semiconductor material is formed at least at a location on said first one of said plurality of fins where at least a portion of said gate structure will be formed thereabove;

after performing said first epitaxial growth process, selectively removing said conformal mask layer from a respective upper portion of a second one of said plurality of fins so as to re-expose said all surfaces of said respective upper portion of said second one of said plurality of fins;

performing a second epitaxial growth process to grow a second semiconductor material on at least a portion of said re-exposed surfaces of said second one of said plurality of fins and said first semiconductor material on said first one of said plurality of fins; and

after performing said first and second epitaxial growth processes, forming said gate structure above said first and second semiconductor materials.

18. The method of claim 17, wherein said first semiconductor material extends along an entire axial length of at least said first one of said plurality of fins.

19. The method of claim 18, wherein said second semiconductor material extends along an entire axial length of at least said first one and said second one of said plurality of fins.

31. The method of claim 17, wherein forming said conformal mask layer comprises performing an oxidation process.

32. The method of claim 17, wherein forming said conformal mask layer comprises depositing a conformal layer of mask material.

20. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of each of said plurality of fins extends above an upper surface of said layer of insulating material so that all surfaces of said upper portions are exposed;

after forming said layer of insulating material, forming a conformal hard mask layer that covers said all surfaces of a respective upper portion of at least a first one of said plurality of fins but leaves said all surfaces of a respective upper portion of at least a second one of said plurality of fins exposed for further processing, wherein said conformal hard mask layer is formed on and in direct contact with said all surfaces of said respective upper portion of said at least said first one of said plurality of fins and an exposed surface of said conformal hard mask layer conforms to a shape of said respective upper portion of said at least said first one of said plurality of fins; and

performing a first epitaxial growth process in the presence of said conformal hard mask layer to grow a first semiconductor material on said all surfaces of said at least said second one of said plurality of fins exposed for further processing, said first semiconductor material extending along an entire axial length of said at least said second one of said plurality of fins.

21. The method of claim 20, further comprising performing a second epitaxial growth process through said conformal hard mask layer to form a second semiconductor material on said first semiconductor material.

22. The method of claim 21, wherein said second semiconductor material extends along an entire axial length of said at least said second one of said plurality of fins.

23. The method of claim 20, wherein forming said conformal hard mask layer comprises:

performing an oxidation process to selectively form an oxidized mask material on said all surfaces of said upper portion of each of said plurality of fins;

after performing said oxidation process, forming a patterned etch mask layer above said plurality of fins that covers said at least said first one of said plurality of fins but leaves at least said second one of said plurality of fins exposed for further processing; and

performing an etching process through said patterned etch mask to selectively remove said oxidized mask material from said at least said second one of said plurality of fins.

24. The method of claim 20, wherein forming said conformal hard mask layer comprises:

performing a deposition process to deposit a mask material on said all surfaces of said upper portion of each of said plurality of fins;

after performing said deposition process, forming a patterned etch mask layer above said plurality of fins that covers said at least said first one of said plurality of fins but leaves at least said second one of said plurality of fins exposed for further processing; and

performing an etching process through said patterned etch mask to selectively remove said deposited mask material from said at least said second one of said plurality of fins.

33. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining at least one fin comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of said at least one fin extends above an upper surface of said layer of insulating material so as to expose all sidewall surfaces and an entirety of a top surface of said upper portion of said at least one fin;

after forming said layer of insulating material, forming a conformal mask layer on all of said exposed sidewall and top surfaces of said upper portion of said at least one fin;

removing said conformal mask layer from said upper portion of said at least one fin so as to re-expose all of said sidewall and top surfaces of said upper portion;

after removing said conformal mask layer and prior to forming a gate structure above said at least one fin, performing a first epitaxial growth process to grow a first semiconductor material at least at a location on said re-exposed upper portion of said at least one fin where at least a portion of said gate structure will be formed thereabove; and

forming said gate structure above said first semiconductor material on said at least one fin.

34. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of each of said plurality of fins extends above an upper surface of said layer of insulating material so that all surfaces of said upper portions are exposed;

after forming said layer of insulating material, forming a conformal hard mask layer that covers said all surfaces of a respective upper portion of at least a first one of said plurality of fins but leaves said all surfaces of a respective upper portion of at least a second one of said plurality of fins exposed for further processing; and

performing a first epitaxial growth process in the presence of said conformal hard mask layer to grow a first semiconductor material on said all surfaces of said at least said second one of said plurality of fins exposed for further processing, said first semiconductor material extending along an entire axial length of said at least said second one of said plurality of fins.

35. The method of claim 34, further comprising performing a second epitaxial growth process through said hard mask layer to form a second semiconductor material on said first semiconductor material, wherein said second semiconductor material extends along said entire axial length of said at least said second one of said plurality of fins.

36. A method of forming a FinFET device, comprising:

forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;

forming a layer of insulating material in said trenches, wherein an upper portion of each of said plurality of fins extends above an upper surface of said layer of insulating material so that all surfaces of said upper portions are exposed;

after forming said layer of insulating material, forming a conformal hard mask layer that covers said all surfaces of a respective upper portion of at least a first one of said plurality of fins but leaves said all surfaces of a respective upper portion of at least a second one of said plurality of fins exposed for further processing;

performing a first epitaxial growth process in the presence of said conformal hard mask layer to grow a first semiconductor material on said all surfaces of said at least said second one of said plurality of fins exposed for further processing; and

performing a second epitaxial growth process through said conformal hard mask layer to form a second semiconductor material on said first semiconductor material, said second semiconductor material extending along an entire axial length of said at least said second one of said plurality of fins.