Method of protecting sidewall surfaces of a semiconductor device
First Claim
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1. A method of making a semiconductor structure, the method comprising:
- forming an opening partially through a semiconductor substrate, said opening including an upper portion and a lower portion, wherein said opening is in a kerf region of said semiconductor substrate;
forming a first dielectric layer over a sidewall surface of said upper portion, wherein said first dielectric layer not does not overlie a sidewall surface of said lower portion; and
forming a conductive material over a sidewall surface of said first dielectric layer, said conductive material not being in direct contact with a sidewall surface of said lower portion.
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Abstract
One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a opening partially through a semiconductor substrate, the opening including an upper portion and a lower portion; forming a first dielectric layer over a sidewall surface of the upper portion, wherein the first dielectric layer does not overlie a sidewall surface of the lower portion; and forming a conductive material over a sidewall surface of the first dielectric layer, the conductive material not being in direct contact with a sidewall surface of the lower portion.
5 Citations
19 Claims
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1. A method of making a semiconductor structure, the method comprising:
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forming an opening partially through a semiconductor substrate, said opening including an upper portion and a lower portion, wherein said opening is in a kerf region of said semiconductor substrate; forming a first dielectric layer over a sidewall surface of said upper portion, wherein said first dielectric layer not does not overlie a sidewall surface of said lower portion; and forming a conductive material over a sidewall surface of said first dielectric layer, said conductive material not being in direct contact with a sidewall surface of said lower portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of making a semiconductor structure, the method comprising:
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forming an opening partially through a semiconductor substrate, said opening including an upper portion and a lower portion; forming a first dielectric layer over a sidewall surface of said upper portion, wherein said first dielectric layer not does not overlie a sidewall surface of said lower portion; and forming a conductive material over a sidewall surface of said first dielectric layer, said conductive material not being in direct contact with a sidewall surface of said lower portion, wherein said forming said conductive material also forms said conductive material in direct contact with a sidewall surface of said lower portion, said method further comprising removing said conductive material formed in direct contact with said sidewall surface of said lower portion.
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18. A method of making a semiconductor structure, the method comprising:
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forming an opening partially through a semiconductor substrate, said opening including an upper portion and a lower portion; forming a first dielectric layer over a sidewall surface of said upper portion, wherein said first dielectric layer not does not overlie a sidewall surface of said lower portion; and forming a conductive material over a sidewall surface of said first dielectric layer, said conductive material not being in direct contact with a sidewall surface of said lower portion, after forming said conductive material, removing a portion of said semiconductor substrate so as to separate said semiconductor substrate into a plurality of spaced apart portions.
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19. A method of making a semiconductor structure, the method comprising:
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forming an opening partially through a semiconductor substrate, said opening including an upper portion and a lower portion; forming a first dielectric layer over a sidewall surface of said upper portion, wherein said first dielectric layer not does not overlie a sidewall surface of said lower portion; and forming a conductive material over a sidewall surface of said first dielectric layer, said conductive material not being in direct contact with a sidewall surface of said lower portion, wherein forming the opening includes forming the upper portion and forming the lower portion after forming the upper portion, wherein the first dielectric layer is formed after forming the upper portion of the opening but before forming the lower portion of the opening.
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Specification